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2N3904 Datasheet PDF

Part Number 2N3904
Description NPN TRANSISTOR
Manufacture Silicon Standard
Total Page 4 Pages
PDF Download Download 2N3904 Datasheet PDF

Features: Datasheet pdf 2N3904 TRANSISTOR(NPN) PRODUCT SUMMARY TO-92 Plastic-Encapsulate Transistors FEATURES NPN silicon epitaxial planar t ransistor for switching and Amplifier a pplications As complementary type, the PNP transistor 2N3906 is Recommended Th is transistor is also available in the SOT-23 case with the type designation M MBT3904 MAXIMUM RATINGS (TA=25 oC unle ss otherwise noted) Symbol VCBO VCEO V EBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperatu re Value 60 40 6 0.2 0.625 150 -55-150 Units V V V A W ℃ ℃ TO-92 1. EMI TTER 2. BASE 3. COLLECTOR 123 03/17/2 008 Rev.1.00 www.SiliconStandard.com 1 2N3904 ELECTRICAL CHARACTERISTICS ( Tamb=25 oC unless otherwise specified) Parameter Symbol Collector-base brea kdown voltage Collector-emitter breakdo wn voltage Emitter-base breakdown volta ge Collector cut-off current Collector cut-off current Emitter cut-.

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2N3904 datasheet
2N3904
TRANSISTOR(NPN)
PRODUCT SUMMARY
TO-92 Plastic-Encapsulate Transistors
FEATURES
NPN silicon epitaxial planar transistor for switching and
Amplifier applications
As complementary type, the PNP transistor 2N3906 is
Recommended
This transistor is also available in the SOT-23 case with
the type designation MMBT3904
MAXIMUM RATINGS (TA=25 oC unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
40
6
0.2
0.625
150
-55-150
Units
V
V
V
A
W
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
123
03/17/2008 Rev.1.00
www.SiliconStandard.com
1

2N3904 datasheet
2N3904
ELECTRICAL CHARACTERISTICS
(Tamb=25 oC unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE1
hFE2
hFE3
VCE(sat)
VBE(sat)
Transition frequency
fT
Delay Time
Rise Time
Storage Time
Fall Time
CLASSIFICATION OF hFE1
Rank
O
td
tr
ts
tf
Range
100-200
Test conditions
IC=10μA, IE=0
IC= 1mA , IB=0
IE= 10μA, IC=0
VCB=60V, IE=0
VCE= 40V, IB=0
VEB= 5V, IC=0
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
IC=50mA, IB=5mA
IC=50mA, IB=5mA
VCE=20V,IC=10mA,f=100MHz
VCC=3V,VBE=0.5V,
IC=10mA,IB1=1mA
VCC=3V, IC=10mA
IB1=IB2=1mA
Y
200-300
MIN
60
40
6
100
60
30
300
TYP MAX UNIT
V
V
V
0.1 μA
0.1 μA
0.1 μA
400
0.3 V
0.95 V
MHZ
35 ns
35 ns
200 ns
50 ns
G
300-400
03/17/2008 Rev.1.00
www.SiliconStandard.com
2





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