MUR40040CT

Silicon Super Fast Recovery Diode Features High Surge Capability Types up to 600 V VRRM MUR40040CT thru MUR40060CTR VRRM = 50 V - 600 V IF = 400 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MUR40040CT (R) MUR40060CT (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current VRRM VRMS VDC IF TC ≤ 125 °C 400 280 400 400 600 420 600 400 Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature IF,SM TC = 25 °C, tp = 8.3 ms Tj Tstg 2400 -40 to 175 -40 to 175 2400 -40 to 175 -40 to 175 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Diode forward voltage Reverse current Recovery Time Maximum reverse recovery time Thermal characteristics Thermal resistance, junction VF IF = 125 A, Tj = 25 °C IR VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 125 °C TRR IF=0.5 A, IR=1.0 A, IRR= 0.25 A RthJC MUR40040CT (R) 1.5 25 3 150 0.14 MUR40060CT (R) 1.7 25 3 180 0.14 Unit V V V A A °C °C Unit V μA mA nS °C/W www.genesicsemi.com 1 MUR40040CT thru MUR40060CTR www.genesicsemi.com 2 ...