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PE636BA
N-Channel Enhancement Mode MOSFET
Description
PE636BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9mΩ @VGS = 10V ID 33A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Tc = 25 °C 33 Continuous Drain Current3 Tc = 100 °C TA = 25 °C ID 21 10...
UNIKC
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PE636BA
N-Channel Enhancement Mode MOSFET
- UNIKC
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