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QM04N65D Dataheets PDF



Part Number QM04N65D
Manufacturers UBIQ
Logo UBIQ
Description N-Ch 650V Fast Switching MOSFETs
Datasheet QM04N65D DatasheetQM04N65D Datasheet (PDF)

QM04N65D 1 2011-03-14 - 1 - N-Ch 650V Fast Switching MOSFETs General Description The QM04N65D is the highest performance N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM04N65D meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Features z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device.

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QM04N65D 1 2011-03-14 - 1 - N-Ch 650V Fast Switching MOSFETs General Description The QM04N65D is the highest performance N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM04N65D meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Features z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 650V RDSON 2.6 Ω ID 4A Applications z High efficient switched mode power supplies z Electronic lamp ballast z LCD TV/ Monitor z Adapter TO252 Pin Configuration D Absolute Maximum Ratings S G Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Rating 650 ±30 4 2.6 8 26.2 7 62.5 -55 to 150 -55 to 150 Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient (Steady State)1 Thermal Resistance Junction-Case1 Typ. ----- Max. 62 2 Units V V A A A mJ A W ℃ ℃ Unit ℃/W ℃/W Rev A.01 D030911 1 QM04N65D 2 2011-03-14 - 2 - N-Ch 650V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) Gate Threshold Voltage VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current gfs Forward Transconductance Rg Gate Resistance Qg Total Gate Charge (10V) Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Turn-On Delay Time Tr Rise Time Td(off) Turn-Off Delay Time Tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Conditions VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=10V , ID=2A VGS=VDS , ID =250uA VDS=520V , VGS=0V , TJ=25℃ VGS=±30V , VDS=0V VDS=15V , ID=2A VDS=0V , VGS=0V , f=1MHz VDS=520V , VGS=10V , ID=1A VDD=300V , VGS=10V , RG=10Ω, ID=1A VDS=25V , VGS=0V , F=1MHz Min. 650 ----- 2 ------------------------------- Typ. --0.69 2.1 ---8.2 ----3 3.4 18 4.9 6.1 11.2 18.8 29.2 29.2 775 56 3.8 Max. ----2.6 5 --2 ±100 --6.8 --------------------- Unit V V/℃ Ω V mV/℃ uA nA S Ω nC ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Single Pulse Avalanche Energy5 Diode Characteristics Conditions VDD=50V , L=1mH , IAS=4A Min. 8.6 Typ. --- Max. --- Unit mJ Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current1,6 Pulsed Source Current2,6 Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=1A , dI/dt=100A/µs , TJ=25℃ Min. ----------- Typ. ------195 580 Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V,L=1mH,IAS=7A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Max. 4 8 1 ----- Unit A A V nS nC 2 Typical Characteristics 3 QM04N65D 2011-03-14 - 3 - N-Ch 650V Fast Switching MOSFETs 5.5 ID=2A 4.5 RDSON (Ω) 3.5 2.5 IS Source Current(A) Fig.1 Typical Output Characteristics 3 2.5 2 1.5 TJ=150℃ TJ=25℃ 1 0.5 0 0.00 0.25 0.50 0.75 VSD , Source-to-Drain Voltage (V) 1.00 Fig.3 Forward Characteristics of Reverse 1.8 1.4 1.5 4 6 VGS (V) 8 Fig.2 On-Resistance vs. G-S Voltage 10 Fig.4 Gate-Charge Characteristics 2.8 2.2 Normalized On Resistance NormalizedVGS(th) (V) 1 1.6 0.6 1.0 0.2 -50 0 50 100 TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ 0.4 150 -50 0 50 100 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ 3 150 QM04N65D 4 2011-03-14 - 4 - N-Ch 650V Fast Switching MOSFETs Capacitance (pF) 10000 1000 F=1.0MHz Ciss 10.00 1.00 10us 100us ID (A) 100 Coss 10 Crss 1 1 5 9 13 17 21 25 VDS , Drain to Source Voltage (V) Fig.7 Capacitance 10ms 100ms DC 0.10 TC=25℃ Single Pulse 0.01 0.1 1 10 100 VDS (V) 1000 Fig.8 Safe Operating Area 10000 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE 0.001 0.00001 PDM T ON T D = TON/T TJpeak = TC+PDMXRθJC 0.0001 0.001 0.01 t , Pulse Width (s) 0.1 Fig.9 Normalized Maximum Transient Thermal Impedance 1 10 Normalized Thermal Response (RθJC) Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform 4 .


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