Document
QM04N65D
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2011-03-14 - 1 -
N-Ch 650V Fast Switching MOSFETs
General Description
The QM04N65D is the highest performance N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM04N65D meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
Features
z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available
Product Summery
BVDSS 650V
RDSON 2.6 Ω
ID 4A
Applications
z High efficient switched mode power supplies z Electronic lamp ballast z LCD TV/ Monitor z Adapter
TO252 Pin Configuration
D
Absolute Maximum Ratings
S G
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃
IDM EAS IAS PD@TC=25℃ TSTG
TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Rating 650 ±30 4 2.6 8 26.2 7 62.5
-55 to 150 -55 to 150
Thermal Data
Symbol RθJA RθJC
Parameter Thermal Resistance Junction-ambient (Steady State)1
Thermal Resistance Junction-Case1
Typ. -----
Max. 62 2
Units V V A A A mJ A W ℃ ℃
Unit ℃/W ℃/W
Rev A.01 D030911
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QM04N65D
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N-Ch 650V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th) △VGS(th)
Gate Threshold Voltage VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
gfs Forward Transconductance
Rg Gate Resistance
Qg Total Gate Charge (10V)
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Td(on)
Turn-On Delay Time
Tr Rise Time
Td(off)
Turn-Off Delay Time
Tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Conditions VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=10V , ID=2A VGS=VDS , ID =250uA VDS=520V , VGS=0V , TJ=25℃ VGS=±30V , VDS=0V VDS=15V , ID=2A VDS=0V , VGS=0V , f=1MHz
VDS=520V , VGS=10V , ID=1A
VDD=300V , VGS=10V , RG=10Ω, ID=1A
VDS=25V , VGS=0V , F=1MHz
Min. 650 -----
2 -------------------------------
Typ. --0.69 2.1 ---8.2 ----3 3.4 18 4.9 6.1 11.2 18.8 29.2 29.2 775 56 3.8
Max. ----2.6 5 --2
±100 --6.8 ---------------------
Unit V
V/℃ Ω V
mV/℃ uA nA S Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol EAS
Parameter Single Pulse Avalanche Energy5
Diode Characteristics
Conditions VDD=50V , L=1mH , IAS=4A
Min. 8.6
Typ. ---
Max. ---
Unit mJ
Symbol IS ISM VSD trr Qrr
Parameter Continuous Source Current1,6 Pulsed Source Current2,6 Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃
IF=1A , dI/dt=100A/µs , TJ=25℃
Min. -----------
Typ. ------195 580
Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V,L=1mH,IAS=7A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Max. 4 8 1 -----
Unit A A V nS nC
2
Typical Characteristics
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QM04N65D
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N-Ch 650V Fast Switching MOSFETs
5.5
ID=2A
4.5
RDSON (Ω)
3.5
2.5
IS Source Current(A)
Fig.1 Typical Output Characteristics
3
2.5
2
1.5
TJ=150℃
TJ=25℃
1
0.5
0
0.00 0.25 0.50 0.75
VSD , Source-to-Drain Voltage (V)
1.00
Fig.3 Forward Characteristics of Reverse
1.8
1.4
1.5 4
6 VGS (V)
8
Fig.2 On-Resistance vs. G-S Voltage
10
Fig.4 Gate-Charge Characteristics
2.8
2.2
Normalized On Resistance
NormalizedVGS(th) (V)
1 1.6
0.6 1.0
0.2 -50
0 50 100
TJ ,Junction Temperature (℃ )
Fig.5 Normalized VGS(th) vs. TJ
0.4 150 -50 0 50 100
TJ , Junction Temperature (℃)
Fig.6 Normalized RDSON vs. TJ
3
150
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2011-03-14 - 4 -
N-Ch 650V Fast Switching MOSFETs
Capacitance (pF)
10000 1000
F=1.0MHz Ciss
10.00 1.00
10us 100us
ID (A)
100 Coss
10
Crss
1 1 5 9 13 17 21 25
VDS , Drain to Source Voltage (V)
Fig.7 Capacitance
10ms 100ms
DC
0.10
TC=25℃
Single Pulse
0.01
0.1 1
10 100
VDS (V)
1000
Fig.8 Safe Operating Area
10000
1 DUTY=0.5
0.2 0.1 0.1
0.05 0.02 0.01 0.01 SINGLE
0.001 0.00001
PDM
T ON
T
D = TON/T TJpeak = TC+PDMXRθJC
0.0001
0.001
0.01
t , Pulse Width (s)
0.1
Fig.9 Normalized Maximum Transient Thermal Impedance
1
10
Normalized Thermal Response (RθJC)
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform 4
.