High Current IGBT
High Current IGBT
Short Circuit SOA Capability
IXSK 80N60B IXSX 80N60B
VCES =
IC25 = =VCE(sat)
600 V 160 A 2.5 V
Sym...
Description
High Current IGBT
Short Circuit SOA Capability
IXSK 80N60B IXSX 80N60B
VCES =
IC25 = =VCE(sat)
600 V 160 A 2.5 V
Symbol
V CES
VCGR V
CES
VGEM I
C25
IC90 I
L(RMS)
ICM SSOA (RBSOA)
tsc SCSOA
PC TJ TJM Tstg TL Md Weight
Symbol
BVCES VGE(th) ICES
IGES
VCE(sat)
Test Conditions
Maximum Ratings
T J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous Transient
600 V 600 V
±20 V ±30 V
T C
=
25°C
TC = 90°C
T C
=
90°C
TC = 25°C, 1 ms
(silicon chip capability) (silicon chip capability) (silicon chip capability)
VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load
VGE = 15 V, VCE = 0.6 VCES, TJ = 125°C
R G
=
5
Ω,
non-repetitive
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264
160 80 75
300
ICM = 160 @ 0.8 V
CES
10
A A A A
A
µs
500 W
-55 ... +150 150
-55 ... +150
°C °C °C
300 °C
0.4/6 Nm/lb.in.
PLUS 247 TO-264
6g 10 g
PLUS 247TM (IXSX)
G C E
TO-264 AA (IXSK)
(TAB)
G C E
(TAB)
G = Gate C = Collector
E = Emitter TAB = Collector
Features ! International standard packages ! Very high current, fast switching IGBT ! Low V
CE(sat)
- for minimum on-state conduction
losses ! MOS Gate turn-on
- drive simplicity
Test Conditions
IC = 500 µA, VGE = 0 V IC = 8 mA, VCE = VGE VCE = VCES V =0V
GE
VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
Characteristic Values (TJ = 25°C, unless otherwise specified)
min. typ. max.
600 V
4 8V
TJ = 25°C
T J
=
125°C
200 µA 2 mA
±200 nA
2.5 V
Applications ! AC motor speed control ! DC ser...
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