FDMJ1032C

FDMJ1032C Dual N & P-Channel PowerTrench® MOSFET FDMJ1032C Dual N & P-Channel PowerTrench® MOSFET N-Channel: 20V, 3.2A, 90mΩ P-Channel: -20V, -2.5A, 160mΩ September 2007 tm Features Q1: N-Channel „ Max rDS(on) = 90mΩ at VGS = 4.5V, ID = 3.2A „ Max rDS(on) = 130mΩ at VGS = 2.5V, ID = 2.5A Q2: P-Channel „ Max rDS(on) = 160mΩ at VGS = -4.5V, ID = -2.5A „ Max rDS(on) = 230mΩ at VGS = -2.5V, ID = -2.0A „ Max rDS(on) = 390mΩ at VGS = -1.8V, ID = -1.0A „ Low gate charge, high power and current handling capability General Description This dual N and P-Channel enhancement mode Power MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Application „ Battery management „ RoHS Compliant Pin 1 S1 S2 G2 Bottom Drain Contact D1 D2 G1 S1 S2 SC-75 MicroFET S2 4 S1 5 G1 6 3 G2 2 S2 1 S1 Bottom Drain Contact MOSFET Maximum Ratings TA= 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation Operating and Storage Junction Temperature Range TA = 25°C TA = 25°C (Note 1a) TA = 25°C (Note 1b) Thermal Characteristics Q1 Q2 20 -20 ±12 ±8 3.2 -2.5 12 -12 1.4 0.8 -55 to +150 Units V V A W °C RθJA RθJA Thermal Resistance, Junction to Ambient, Single Operation Thermal Resistance, Junction to Ambient, Single Operat...