IRF7304QPBF

PD - 96104A IRF7304QPbF l Advanced Process Technology l Ultra Low On-Resistance l Dual P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free S1 G1 S2 G2 Description These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniquestoachieveextremelylow on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. HEXFET® Power MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 Top View VDSS = -20V RDS(on) = 0.090Ω SO-8 Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG Parameter 10 Sec. Pulsed Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Max. -4.7 -4.3 -3.4 -17 2.0 0.016 ±12 -5.0 -55 to + 150 Units A W W/°C V V/ns °C Thermal Resistance Ra...