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IRF7306QPBF Datasheet, Equivalent, Power MOSFET.Power MOSFET Power MOSFET |
| Part | IRF7306QPBF |
|---|---|
| Description | Power MOSFET |
| Feature | END OF LIFE
PD - 96105B
IRF7306QPbF
HEXFET® Power MOSFET
l Advanced Process Technology l Ultra Low On-Resistance l Dual P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free
Description
These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely. |
| Manufacture | International Rectifier |
| Datasheet |
| Part | IRF7306QPBF |
|---|---|
| Description | Power MOSFET |
| Feature | END OF LIFE
PD - 96105B
IRF7306QPbF
HEXFET® Power MOSFET
l Advanced Process Technology l Ultra Low On-Resistance l Dual P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free
Description
These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely. |
| Manufacture | International Rectifier |
| Datasheet |
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