IRF7309QPBF

PD - 96135A l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free Description These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniquestoachieveextremelylow on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. IRF7309QPbF HEXFET® Power MOSFET N-CHANNEL MOSFET S1 1 8 D1 N-Ch P-Ch G1 2 S2 3 7 D1 VDSS 6 D2 30V -30V G2 4 5 D2 RDS(on) 0.050Ω 0.10Ω P-CHANNEL MOSFET Top View SO-8 www.irf.com 1 08/02/10 IRF7309QPbF nA 2 www.irf.com IRF7309QPbF www.irf.com 3 IRF7309QPbF 4 www.irf.com IRF7309QPbF www.irf.com 5 IRF7309QPbF 6 www.irf.com IRF7309QPbF www.irf.com 7 IRF7309QPbF 8 www.irf.com IRF7309QPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer + - -+ dv/dt controlled by RG ISD contr...