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IN93AA86N Dataheets PDF



Part Number IN93AA86N
Manufacturers Integral
Logo Integral
Description 16K-BIT SERIAL EEPROM
Datasheet IN93AA86N DatasheetIN93AA86N Datasheet (PDF)

IN93AA86N, IN93AA86D 16K-BIT SERIAL EEPROM WITH MICROWIRE INTEFACE (compatible to САТ93С86 Catalyst) DESCRIPTION The IN93LC86 is a Electric erasable programmable ROM (EEPROM) memory data capacity 4K (2048x8 or 1024x16) with 3-wire interface. There are 3 modification of ICs A: ICs IN93AA86AD/AN are 8 bits registers (2048х8) - ORG pin not used B: ICs IN93AA86BD/BN are 16 bits registers (1024х16) - ORG pin not used C: ICs IN93AA86CN/CD are configured as either registers of 8 bits (ORG pin at GND) o.

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IN93AA86N, IN93AA86D 16K-BIT SERIAL EEPROM WITH MICROWIRE INTEFACE (compatible to САТ93С86 Catalyst) DESCRIPTION The IN93LC86 is a Electric erasable programmable ROM (EEPROM) memory data capacity 4K (2048x8 or 1024x16) with 3-wire interface. There are 3 modification of ICs A: ICs IN93AA86AD/AN are 8 bits registers (2048х8) - ORG pin not used B: ICs IN93AA86BD/BN are 16 bits registers (1024х16) - ORG pin not used C: ICs IN93AA86CN/CD are configured as either registers of 8 bits (ORG pin at GND) or 16 bits (ORG pin at VCC, or not connected). Each register can be written (or read) serially by using the DI (or DO) pin. The ICs is purposed for reading, writing & nonvolatile data storage. ICs can be used in TV-sets, telecom equipment & consumer electronic devices. FEATURES ■ 100 year data (16K) retention for Ta=25oC; ■ Single power supply source (VСС = 1,8 V – 6,0 V); ■ Build-in voltage multiplier; ■ Serial I/O bus; ■ Autoincrement of address word; ■ Self-timed write cycle; ■ 1,000,000 Program/erase cycles; ■ Power-up internal logic setup; ■ Read cycles quantity are not limited; ■ Low power consumption; ■ Operating temperature range -40 … +85 oC. N SUFFIX DIP 8 1 D SUFFIX 8 SOIC 1 PIN FUNCTIONS Pin Name Function CS Chip Select CS 01 08 Vcc SK Clock Input DI Serial Data Input SK 02 07 NC (ORG) DO VCC GND ORG Serial Data Output +1.8 to 6.0V Power Supply Ground Memory Organization pin * DI 03 DO 04 06 ORG 05 GND NC No Connection Note * this pin is present only in IN93AA86CN, IN93AA86CD: When the ORG pin is connected to VCC, the x16 organization is selected. When it is connected to ground, the x8 pin is selected. If the ORG pin is left unconnected, then an internal pullup device will select the x16 organization. Ver.00/13.10.2008 1 IN93AA86-TSe.doc 865792 IN93AA86N, IN93AA86D IN93AA86AN/AD, IN93AA86BN/BD, IN93AA86CN/CD Block Diagram Recommended Operation Conditions & Maximum Ratings* Parameter, unit Supply voltage,V High level input 4,5 V ≤ Ucc ≤ 5,5 V voltage, V 1,8 V ≤ Ucc < 4,5 V Low level input 4,0 V ≤ Ucc ≤ 5,5 V voltage, V 1,8 V ≤ Ucc < 4,0 V Low level output current мА Output short-circuit current, mA 1) Time not more than 1 sec Symbol UCC UIH UIL IOL IOS 1) Recommended Operation Conditions Min Max 1,8 6,0 2,0 0,7Ucc Ucc + 1,0 Ucc + 1,0 -0,1 0,8 0 0,2Ucc – 2,1 –– Maximum Ratings Min - 0,5 Max 7,0 -0,5 Ucc + 1,0 - 0,5 – – – – 100 Ver.00/13.10.2008 2 IN93AA86-TSe.doc 865792 IN93AA86N, IN93AA86D Electric Parameters Parameter, unit Low level output voltage, V Symbol UOL1 High level output voltage, V UOH1 Low level output voltage, V UOL2 High level output voltage, V UOH2 Low level input leakage current, uA High level input leakage current, uA IILL IILH Low level output leakage current, uA IOLL High level output leakage current, uA IOLH Consumption current (8-bit mode), uA IN93AA86CN, IN93AA86CD IN93AA86AN, IN93AA86AD Consumption current (16-bit mode), uA ICC1 ICC2 IN93AA86CN, IN93AA86CD IN93AA86AN, IN93AA86AD Consumption current (Operating Read), uA Consumption current (Operating Write/Erase), mA IOCC R IOCC E/W tPD0 Output Delay to Low, ns Output Delay to High, ns tPD1 Mode 4,5 V ≤ UCC ≤ 5,5 V IOL = 2,1 mA 4,5 V ≤ UCC ≤ 5,5 V IOH = -400 uA 1,8 V ≤ UCC < 4,5 V IOL = 1 mA 1,8 V ≤ UCC < 4,5 V IOH = -100 uA 1,8 V ≤ UCC ≤ 6,0 V UI = Ucc 1,8 V ≤ UCC ≤ 6,0 V UO = Ucc UCS = 0 V 1,8 V ≤ UCC ≤ 6,0 V UO = Ucc UCS = 0 V 1,8 V ≤ UCC ≤ 6,0 V Ucc = 5,5 V UCS = 0 V UORG = 0 V ORG not connected Ucc = 5,5 V UCS = 0 V UORG = Ucc or ORG not connected ORG not connected Ucc = 5,0 V fC = 1 MHz Ucc = 5,0 V fC = 1 MHz 4,5 V ≤ UCC ≤ 6,0 V fC = 3 MHz 2,5 V ≤ UCC ≤ 6,0 V fC = 1 MHz 1,8 V ≤ UCC ≤ 6,0 V fC = 0,5 MHz 4,5 V ≤ UCC ≤ 6,0 V fC = 3 MHz 2,5 V ≤ UCC ≤ 6,0 V fC = 1 MHz 1,8 V ≤ UCC ≤ 6,0 V fC = 0,5 MHz Min – 2,4 – UCC-0,2 – – – Max 0,4 – 0,2 – -1,0 1,0 -1,0 TA, °С 25 ± 10; -45; 85 – 1,0 – 10 – 10 – 500 – 3,0 – 150 – 500 – 1000 – 150 – 500 – 1000 Ver.00/13.10.2008 3 IN93AA86-TSe.doc 865792 IN93AA86N, IN93AA86D Parameter, unit Output Delay to High-Z, ns Symbol tHZ Write/Erase cycle, ms tCY Output Delay to Status Check, ns tSV Power-up to Read Operation Time, ms tPUR Power-up to Wtite Operation Time, ms tPUW Program/erase cycles NE/W Mode 4,5 V ≤ UCC ≤ 6,0 V fC = 3 MHz 2,5 V ≤ UCC ≤ 6,0 V fC = 1 MHz 1,8 V ≤ UCC ≤ 6,0 V fC = 0,5 MHz 4,5 V ≤ UCC ≤ 6,0 V fC = 3 MHz 2,5 V ≤ UCC ≤ 6,0 V fC = 1 MHz 1,8 V ≤ UCC ≤ 6,0 V fC = 0,5 MHz 4,5 V ≤ UCC ≤ 6,0 V fC = 3 MHz 2,5 V ≤ UCC ≤ 6,0 V fC = 1 MHz 1,8 V ≤ UCC ≤ 6,0 V fC = 0,5 MHz 4,5 V ≤ UCC ≤ 6,0 V fC = 3 MHz 2,5 V ≤ UCC ≤ 6,0 V fC = 1 MHz 1,8 V ≤ UCC ≤ 6,0 V fC = 0,5 MHz 4,5 V ≤ UCC ≤ 6,0 V fC = 3 MHz 2,5 V ≤ UCC ≤ 6,0 V fC = 1 MHz 1,8 V ≤ UCC ≤ 6,0 V fC = 0,5 MHz Ucc = 5,0 V Min – – – – – – – – – – – – – – – 1000000 Max 100 200 400 10 10 10 100 500 1000 1,0 1,0 1,0 1,0 1,0 1,0 – TA, °С 25 ± 10; -40; 85 25 ± 10 Notes 1.tPUR & tPUW times are delays from of power up to operation started 2. UCS, UORG – voltage.


IN93AA86CD IN93AA86N IN93AA86D


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