IN25AA160D

IN25АА080N, IN25АА080D, IN25АА160N, IN25АА160D NONVOLATILE ELECTRICALLY ERASABLE PROM WITH SERIAL PERIPHERAL INTERFACE (SPI). functionally compartible to 25AA080, 25AA160 (Microchip) DESCRIPTION The IN25АА080N/D are a 8K(1Kx8) serial Electrically Erasable PROM with SPI interface. *The IN25АА160N/D are a 16K (2Kx8) serial Electrically Erasable PROM with SPI interface (SPI). The ICs is purposed for reading, writing & nonvolatile data storage in electronic units with SPI interface. ICs are realized in SO-8 (MS-012АA) and DIP-8 (MS-001BA) FEATURES - Data capacity, QINF: for IN25АА080N, IN25АА080D for IN25АА160N, IN25АА160D 8192 bit, 16384 bit; - Maximum clock frequency, fC: for 4,5 V ≤ UCC ≤ 5,5 V for 2,5 V ≤ UCC ≤ 5,5 V for 1,8 V ≤ UCC ≤ 5,5 V - Maximum stand-by current, ICC: for UCC = 5,5 V, UIL = 0 V, UIH = UCC for UCC = 2,5 V, UIL = 0 V, UIH = UCC - Maximum read current, IOCCR : 3 MHz; 2 MHz; 1 MHz; 5,0 uA 1,0 uA; for UCC = 5,5 В, fC = 3,0 МГц, SO pin is not loaded .…1,0 mA, for UCC = 2,5 В, fC = 2,0 МГц, SO pin is not loaded …..0,5 mA; - Maximum write current, IOCCW : for UCC = 5,5 V 5,0 mA; for UCC = 2,5 V 3,0 mA; - Byte & page (16 bytes) data write modes are available; - Endurance NE/W, …...1000000 cycles; - Build-in write protection block - Write protection for 1/4, 1/2, or all of storage array; - Power on/off data protection circuitry; - Supply voltage UCC 1,8 … 5,5 V; - Operating temperature range -40 … +85°C. - 100 years non-volatile data retention t...