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QM3001J

UBIQ

P-Ch 30V Fast Switching MOSFETs

QM3001J P-Ch 30V Fast Switching MOSFETs General Description The QM3001J is the highest performance trench P-ch MOSFETs ...


UBIQ

QM3001J

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Description
QM3001J P-Ch 30V Fast Switching MOSFETs General Description The QM3001J is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3001J meet the RoHS and Green Product requirement , with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z Green Device Available Product Summery BVDSS -30V RDSON 52mΩ ID -4.5A Applications z High Frequency Point-of-Load Synchronous Buck Converter z Networking DC-DC Power System z Load Switch SOT89 Pin Configuration D Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range GDS Rating -30 ±20 -4.5 -3.5 -23 1.5 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Typ. ----- Max. 85 30 Unit ℃/W ℃/W Rev A.03 D101311 1 QM3001J P-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-R...




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