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QM3001U Dataheets PDF



Part Number QM3001U
Manufacturers UBIQ
Logo UBIQ
Description P-Ch 30V Fast Switching MOSFETs
Datasheet QM3001U DatasheetQM3001U Datasheet (PDF)

QM3001U P-Ch 30V Fast Switching MOSFETs General Description The QM3001U is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3001U meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS.

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QM3001U P-Ch 30V Fast Switching MOSFETs General Description The QM3001U is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3001U meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS -30V RDSON 42mΩ ID -18A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch TO251 Pin Configuration D Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, -VGS @ -10V1 Continuous Drain Current, -VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range G DS Rating -30 ±20 -18 -10 -36 59 -19 20.8 -55 to 150 -55 to 150 Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Typ. ----- Max. 62 5 Units V V A A A mJ A W ℃ ℃ Unit ℃/W ℃/W Rev A.01 D060509 1 QM3001U P-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) IDSS Gate Threshold Voltage VGS(th) Temperature Coefficient Drain-Source Leakage Current IGSS gfs Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Leakage Current Forward Transconductance Total Gate Charge (-4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Conditions VGS=0V , ID=-250uA Reference to 25℃ , ID=-1mA VGS=-10V , ID=-10A VGS=-4.5V , ID=-4A VGS=VDS , ID =-250uA VDS=-24V , VGS=0V , TJ=25℃ VDS=-24V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V VDS=-10V , ID=-10A VDS=-20V , VGS=-4.5V , ID=-12A VDD=-12V , VGS=-10V , RG=3.3Ω, ID=-5A VDS=-15V , VGS=0V , f=1MHz Min. -30 -------1.0 ------------------------------- Typ. --- -0.085 35 65 -1.6 0.375 ------6 6.4 2.7 3.1 9 16.6 21 21.6 655 290 115 Max. ----42 78 -2.5 --1 5 ±100 ----------------------- Unit V V/℃ mΩ V V/℃ uA nA S nC ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Single Pulse Avalanche Energy5 Conditions VDD=-25V , L=0.1mH , IAS=-10A Min. 16 Typ. --- Max. --- Unit mJ Diode Characteristics Symbol Parameter Conditions Min. IS Continuous Source Current1,6 ISM Pulsed Source Current2,6 VSD Diode Forward Voltage2 VG=VD=0V , Force Current VGS=0V , IS=-10A , TJ=25℃ ------- Note : 1.The data tested by surface .


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