Document
QM3001U
P-Ch 30V Fast Switching MOSFETs
General Description
The QM3001U is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3001U meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
Features
z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available
Product Summery
BVDSS -30V
RDSON 42mΩ
ID -18A
Applications
z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System z Load Switch
TO251 Pin Configuration
D
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃
IDM EAS IAS PD@TC=25℃ TSTG
TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, -VGS @ -10V1 Continuous Drain Current, -VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
G DS
Rating -30 ±20 -18 -10 -36 59 -19 20.8
-55 to 150 -55 to 150
Thermal Data
Symbol RθJA RθJC
Parameter Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
Typ. -----
Max. 62 5
Units V V A A A mJ A W ℃ ℃
Unit ℃/W ℃/W
Rev A.01 D060509
1
QM3001U
P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th) △VGS(th)
IDSS
Gate Threshold Voltage VGS(th) Temperature Coefficient
Drain-Source Leakage Current
IGSS gfs Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
Gate-Source Leakage Current Forward Transconductance Total Gate Charge (-4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Conditions VGS=0V , ID=-250uA Reference to 25℃ , ID=-1mA VGS=-10V , ID=-10A VGS=-4.5V , ID=-4A VGS=VDS , ID =-250uA VDS=-24V , VGS=0V , TJ=25℃ VDS=-24V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V VDS=-10V , ID=-10A
VDS=-20V , VGS=-4.5V , ID=-12A
VDD=-12V , VGS=-10V , RG=3.3Ω, ID=-5A
VDS=-15V , VGS=0V , f=1MHz
Min. -30 -------1.0 -------------------------------
Typ. ---
-0.085 35 65 -1.6
0.375 ------6 6.4 2.7 3.1 9 16.6 21 21.6 655 290 115
Max. ----42 78 -2.5 --1 5
±100 -----------------------
Unit V
V/℃ mΩ V V/℃ uA nA S
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol EAS
Parameter Single Pulse Avalanche Energy5
Conditions VDD=-25V , L=0.1mH , IAS=-10A
Min. 16
Typ. ---
Max. ---
Unit mJ
Diode Characteristics
Symbol
Parameter
Conditions
Min.
IS Continuous Source Current1,6 ISM Pulsed Source Current2,6 VSD Diode Forward Voltage2
VG=VD=0V , Force Current VGS=0V , IS=-10A , TJ=25℃
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Note : 1.The data tested by surface .