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QM3003M3

UBIQ

P-Ch 30V Fast Switching MOSFETs

QM3003M3 General Description The QM3003M3 is the highest performance trench P-ch MOSFETs with extreme high cell density...


UBIQ

QM3003M3

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Description
QM3003M3 General Description The QM3003M3 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3003M3 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings P-Ch 30V Fast Switching MOSFETs Product Summery BVDSS -30V RDSON 20mΩ ID -32A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch PRPAK3X3 Pin Configuration D S SSG Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Rating 10s Steady State -30 ±20 -32 -20 -12.2 -7.7 -9.8 -6.2 -65 176 -38 29 4.2 1.67 -55 to 150 -55 to 150 Units V V A A A A A mJ A W W ℃ ℃ Thermal Data Symbol RθJA RθJA RθJC Parameter Thermal Resistance Junct...




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