QM3201S Switching MOSFETs Datasheet

QM3201S Datasheet, PDF, Equivalent


Part Number

QM3201S

Description

Dual P-Ch 30V Fast Switching MOSFETs

Manufacture

UBIQ

Total Page 4 Pages
Datasheet
Download QM3201S Datasheet


QM3201S
QM3201S
Dual P-Ch 30V Fast Switching MOSFETs
General Description
The QM3201S is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM3201S meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Product Summery
BVDSS
-30V
RDSON
45m
ID
-6A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
Dual SOP8 Pin Configuration
D1D1D2D2
Absolute Maximum Ratings
S1G1S2G2
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
IAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Rating
-30
±20
-6
-4
-12
59
19
2.08
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
Typ.
---
---
Max.
85
60
Unit
/W
/W
Rev A.01 D063009
1

QM3201S
QM3201S
Dual P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Drain-Source Leakage Current
IGSS
gfs
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=-250uA
Reference to 25, ID=-1mA
VGS=-10V , ID=-6A
VGS=-4.5V , ID=-3A
VGS=VDS , ID =-250uA
VDS=-24V , VGS=0V , TJ=25
VDS=-24V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=-10V , ID=-6A
VDS=-20V , VGS=-4.5V , ID=-6A
VDD=-12V , VGS=-10V , RG=3.3Ω,
ID=-5A
VDS=-25V , VGS=0V , f=1MHz
Min.
-30
---
---
---
-1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
-0.085
35
65
-1.5
0.375
---
---
---
6
6.4
2.7
3.1
9
16.6
21
21.6
645
272
105
Max.
---
---
45
82
-2.5
---
1
5
±100
---
---
---
---
---
---
---
---
---
---
---
Unit
V
V/
mΩ
V
mV/
uA
nA
S
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
Conditions
VDD=-25V , L=0.1mH , IAS=-10A
Min.
16
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
Parameter
Conditions
Min.
IS Continuous Source Current1,6
ISM Pulsed Source Current2,6
VSD Diode Forward Voltage2
VG=VD=0V , Force Current
VGS=0V , IS=-6A , TJ=25
---
---
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-19A
4.The power dissipation is limited by 150junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Typ.
---
---
---
Max.
-6
-12
-1.2
Unit
A
A
V
2


Features QM3201S Dual P-Ch 30V Fast Switching MOS FETs General Description The QM3201S i s the highest performance trench P-ch M OSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buc k converter applications . The QM3201S meet the RoHS and Green Product require ment , 100% EAS guaranteed with full fu nction reliability approved. Features z Advanced high cell density Trench tech nology z Super Low Gate Charge z Excell ent CdV/dt effect decline z 100% EAS Gu aranteed z Green Device Available Prod uct Summery BVDSS -30V RDSON 45mΩ ID -6A Applications z High Frequency P oint-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Dual SOP8 Pi n Configuration D1D1D2D2 Absolute Maxi mum Ratings S1G1S2G2 Symbol VDS VGS I D@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@ TC=25℃ TSTG TJ Parameter Drain-Sourc e Voltage Gate-Source Voltage Continuou s Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed.
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