PZTA96T1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PZTA96T1/D High Voltage Transistor PNP Silicon COLLECTOR 2,4 PZTA96T1 Motorola Preferred Device MAXIMUM RATINGS BASE 1 EMITTER 3 SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT Rating Symbol Value Unit Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Total Power Dissipation up to TA = 25°C(1) Storage Temperature Range Junction Temperature DEVICE MARKING VCEO VCBO VEBO IC PD Tstg TJ – 450 – 450 – 5.0 – 500 1.5 – 65 to +150 150 Vdc Vdc Vdc mAdc Watts °C °C 4 1 2 3 CASE 318E–04, STYLE 1 TO–261AA ZTA96 THERMAL CHARACTERISTICS Characteristic Thermal Resistance from Junction to Ambient(1) Symbol RθJA Max 83.3 Unit °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) V(BR)CEO – 450 — Vdc Collector–Emitter Breakdown Voltage (IC = –100 µAdc, IE = 0) V(BR)CBO – 450 — Vdc Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0) V(BR)EBO – 5.0 — Vdc Collector–Base Cutoff Current (VCB = – 400 Vdc, IE = 0) ICBO — – 0.1 µAdc Emitter–Base Cutoff Current (VBE = – 4.0 Vdc, IC = 0) IEBO — – 0.1 µAdc ON CHARACTERISTICS DC Current Gain(2) (IC = – 10 mAdc, VCE = – 10 Vdc) hFE 50 150 — Saturation Voltages (IC = –20 mAdc, IB = –2.0 mAdc) (IC = –20 mAdc, IB = –2.0 mAdc) Vdc VCE(sat) — – 0.6 VBE(sat) — – 1.0...