2SA2183

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2183 High Current Switching Applications Low collector-emitter saturation : VCE(sat) = −1.0 V（max） 2SA2183 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −60 V Emitter-base voltage VEBO −7 V Collector current DC Pulse IC ICP −5.0 −8.0 A A Base current IB −0.5 A Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC Tj Tstg 2 20 150 −55 to 150 W W °C °C 1 : Base 2 : Collector 3 : Emitter JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high JEITA SC-67 temperature/current/voltage and the significant change in TOSHIBA 2-10U1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 1.7 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-16 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector emitter saturation voltage Base-em...