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US1B Dataheets PDF



Part Number US1B
Manufacturers Vishay
Logo Vishay
Description Surface Mount Ultrafast Rectifier
Datasheet US1B DatasheetUS1B Datasheet (PDF)

US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier DO-214AC (SMA) FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vish.

  US1B   US1B



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US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier DO-214AC (SMA) FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) VRRM 1.0 A 50 V, 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V IFSM trr VF at IF TJ max. Package 30 A 50 ns, 75 ns 1.0 V, 1.7 V 150 °C DO-214AC (SMA) Diode variations Single die TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive, and telecommunication. MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, .....) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL US1A Device marking code UA Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL = 110 °C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load VRRM VRMS VDC IF(AV) IFSM 50 35 50 Operating and storage temperature range TJ, TSTG US1B UB 100 70 100 US1D UD 200 140 200 US1G UG 400 280 400 1.0 US1J UJ 600 420 600 30 -55 to +150 US1K UK 800 560 800 US1M UM 1000 700 1000 UNIT V V V A A °C Revision: 28-Apr-14 1 Document Number: 88768 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL US1A US1B US1D Maximum instantaneous forward voltage 1.0 A VF (1) 1.0 Maximum DC reverse current at rated DC blocking voltage Maximum reverse recovery time Typical junction capacitance TA = 25 °C TA = 100 °C IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 4.0 V, 1 MHz IR trr CJ 50 15 Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle US1G 10 50 US1J US1K 1.7 75 10 US1M UNIT V μA ns pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL US1A US1B US1D Maximum thermal resi.


US1A US1B US1D


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