US1A, US1B, US1D, US1G, US1J, US1K, US1M
www.vishay.com
Vishay General Semiconductor
Surface Mount Ultrafast Rectifier
DO-214AC (SMA)
FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C • AEC-Q101 qualified • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV) VRRM
1.0 A
50 V, 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V
IFSM trr
VF at IF TJ max. Package
30 A 50 ns, 75 ns 1.0 V, 1.7 V
150 °C DO-214AC (SMA)
Diode variations
Single die
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive, and telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, .....)
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL US1A
Device marking code
UA
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at TL = 110 °C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
VRRM VRMS VDC IF(AV)
IFSM
50 35 50
Operating and storage temperature range
TJ, TSTG
US1B UB 100 70 100
US1D UD 200 140 200
US1G UG 400 280 400 1.0
US1J UJ 600 420 600
30
-55 to +150
US1K UK 800 560 800
US1M UM 1000 700 1000
UNIT
V V V A A °C
Revision: 28-Apr-14
1 Document Number: 88768
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
US1A, US1B, US1D, US1G, US1J, US1K, US1M
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL US1A US1B US1D
Maximum instantaneous forward voltage
1.0 A
VF (1)
1.0
Maximum DC reverse current at rated DC blocking voltage
Maximum reverse recovery time
Typical junction capacitance
TA = 25 °C
TA = 100 °C
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
4.0 V, 1 MHz
IR
trr CJ
50 15
Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle
US1G
10 50
US1J
US1K 1.7
75 10
US1M UNIT V
μA
ns pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL US1A US1B US1D
Maximum thermal resi.