SS8050

SS8050 TRANSISTOR (NPN) Features Complimentary to SS8550 RoHS compliant package Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [SS8050] © Bruckewell Technology Corporation Rev. A -2014 SS8050 TRANSISTOR (NPN) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS MAXIMUM RATING @ Ta=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current PC Collector Dissipation Tj Junction Temperature Tstg Storage Temperature Value 40 25 5 1.5 0.3 150 -55 to +150 Unit V V V A W °C °C ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified Symbol Parameter Test Conditions V(BR)CBO Collector-base breakdown voltage IC = 100μA , IE = 0 V(BR)CEO V(BR)EBO Collector-emitter breakdown voltage Emitter-base breakdown voltage IC = 0.1mA , IB = 0 IE = 100μA , IC = 0 ICBO Collector cut-off current VCB = 40 V , IE = 0 ICEO Collector cut-off current VCB = 20 V , IE = 0 IEBO Emitter cut-off current VEB = 5 V , IC = 0 hFE(1) hFE(2) DC current gain VCE = 1 V , IC = 100 mA VCE = 1 V , IC = 800 mA VCE(sat) Collector-emitter saturation voltage IC = 800mA , IB = 80mA VBE(sat) Base-emitter saturation voltage IC = 800mA , IB = 80mA fT Transition frequency VCE=10V, IC= 50mA, f=30MHz MIN TYP MAX UNIT 40 V 25 V 5V 0.1 μA 0.1 μA 0.1 μA 120 400 40 0.5 V 1.2 V 100 MHz CLASSIFICATION OF hFE(1) Rank L Range 120-200 H 200-350 J 300-400 Publica...