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1N5402 Dataheets PDF



Part Number 1N5402
Manufacturers EIC
Logo EIC
Description SILICON RECTIFIER DIODES
Datasheet 1N5402 Datasheet1N5402 Datasheet (PDF)

1N5400 - 1N5408 PRV : 50 - 1000 Volts Io : 3.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.929 grams SILICON RECTIFIER DIODES DO - 201AD .

  1N5402   1N5402


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1N5400 - 1N5408 PRV : 50 - 1000 Volts Io : 3.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.929 grams SILICON RECTIFIER DIODES DO - 201AD 0.21 (5.33) 0.19 (4.83) 0.052 (1.32) 0.048 (1.22) 1.00 (25.4) MIN. 0.375 (9.53) 0.285 (7.24) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 75 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 3.0 Amps. Maximum DC Reverse Current Ta = 25 °C at rated DC Blocking Voltage Ta = 100 °C Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Junction Temperature Range Storage Temperature Range SYMBOL 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 UNIT VRRM VRMS VDC 50 100 200 400 600 800 1000 V 35 70 140 280 420 560 700 V 50 100 200 400 600 800 1000 V IF 3.0 A IFSM VF IR IR(H) CJ RθJA TJ TSTG 200 0.95 5.0 50 28 15 - 65 to + 175 - 65 to + 175 A V µA µA pF °C/W °C °C Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted. Page 1 of 2 Rev. 02 : March 25, 2005 AVERAGE FORWARD OUTPUT CURRENT, AMPERES FORWARD CURRENT, AMPERES RATING AND CHARACTERISTIC CURVES ( 1N5400 - 1N5408 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 3.0 2.4 1.8 1.2 0.6 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE, ( °C) FIG.3 - TYPICAL FORWARD CHARACTERISTICS 100 10 Pulse Width = 300 µs 2% Duty Cycle 1.0 TJ = 25 °C 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE, VOLTS JUNCTION CAPACITANCE (pF) PEAK FORWARD SURGE CURRENT, AMPERES FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 250 200 150 100 50 8.3ms SINGLE HALF SINE-WAVE (JEDEC) Method 0 12 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz FIG 4 . - TYPICAL JUNCTION CAPACITANCE 100 50 TJ = 25 °C 10 5 1 1 2 4 10 20 40 100 REVERSE VOLTAGE, VOLTS FIG. 5 - TYPICAL REVERSE CHARACTERISTICS 10 Ta = 100 °C 1.0 REVERSE CURRENT, MICROAMPERES 0.1 Ta = 25 °C 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 02 : March 25, 2005 .


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