2N5550 2N5551
SILICON NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N555...
2N5550 2N5551
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5550 and 2N5551 are silicon
NPN transistors designed for high voltage amplifier applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL 2N5550
2N5551
Collector-Base Voltage
VCBO
160
180
Collector-Emitter Voltage
VCEO
140
160
Emitter-Base Voltage Continuous Collector Current
VEBO
6.0
IC
600
Power Dissipation
PD
625
Power Dissipation (TC=25°C)
PD
1.0
Operating and Storage Junction Temperature Thermal Resistance
TJ, Tstg ΘJA
-65 to +150 200
Thermal Resistance
ΘJC
125
UNITS V V V mA
mW W °C °C/W °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N5550
2N5551
SYMBOL TEST CONDITIONS
MIN TYP MAX MIN TYP MAX
ICBO
VCB=100V
-
- 100 - - -
ICBO ICBO
VCB=120V VCB=100V, TA=100°C
-
- - - - 50
-
- 100 - - -
ICBO
VCB=120V, TA=100°C
-
- - - - 50
IEBO
VEB=4.0V
-
- 50 - - 50
BVCBO BVCEO
IC=100μA IC=1.0mA
160 - - 180 - 140 - - 160 - -
BVEBO
IE=10μA
6.0 - - 6.0 - -
VCE(SAT) IC=10mA, IB=1.0mA
-
- 0.15 - - 0.15
VCE(SAT) VBE(SAT)
IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA
-
- 0.25 - - 0.20
-
- 1.0 - - 1.0
VBE(SAT) IC=50mA, IB=5.0mA
-
- 1.2 - - 1.0
hFE
VCE=5.0V, IC=1.0mA
60
-
- 80 -
-
hFE
VCE=5.0V, IC=10mA
hFE
VCE=5.0V, IC=50mA
60
- 250 80 - 250
20
-
- 30 -
-
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
50
- 200 ...