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RT1N237M Dataheets PDF



Part Number RT1N237M
Manufacturers Isahaya Electronics Corporation
Logo Isahaya Electronics Corporation
Description Transistor
Datasheet RT1N237M DatasheetRT1N237M Datasheet (PDF)

RT1N237X SERIES 〈Transistor〉 Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION RT1N237X is a one chip transistor with built-in bias resistor,PNP type is RT1P237X. FEATURE www.DataSheet4U.・cBoumilt-in bias resistor (R1=2.2kΩ,R2=47kΩ). APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. Equivalent circuit R1 B (IN) R2 C (OUT) E (GND) RT1N237S 4.0 0.1 0.45 2.0 1.3 0.65 0.65 0.7 0.55 0~0.1 1.6 1.0 0.5 0.5 OUTLINE DRAWI.

  RT1N237M   RT1N237M


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RT1N237X SERIES 〈Transistor〉 Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION RT1N237X is a one chip transistor with built-in bias resistor,PNP type is RT1P237X. FEATURE www.DataSheet4U.・cBoumilt-in bias resistor (R1=2.2kΩ,R2=47kΩ). APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. Equivalent circuit R1 B (IN) R2 C (OUT) E (GND) RT1N237S 4.0 0.1 0.45 2.0 1.3 0.65 0.65 0.7 0.55 0~0.1 1.6 1.0 0.5 0.5 OUTLINE DRAWING UNIT:mm RT1N237U 1.6 0.4 0.8 0.4 RT1N237C 2.5 0.5 1.5 0.5 0.3 2.9 1.90 0.95 0.95 ① ②③ ① ②③ 0.16 0.4 0.15 1.1 0.8 0~0.1 JEITA:- JEDEC:- Terminal Connector ①:Base ②:Emitter ③:Collector RT1N237M 2.1 0.425 1.25 0.425 ① ②③ 0.3 1.2 0.8 0.4 0.4 JEITA:SC-59 JEDEC:Similar to TO-236 Terminal Connector ①:Base ②:Emitter ③:Collector RT1N237T 0.2 0.8 0.2 ① ②③ 0.25 14.0 3.0 1.0 1.0 0.15 0.45 1.27 1.27 0.9 0.7 0~0.1 0.4 2.5 ①②③ JEITA:- JEDEC:- Terminal Connector ①:Emitter ②:Collector ③:Base JEITA:SC-70 JEDEC:- Terminal Connector ①:Base ②:Emitter ③:Collector JEITA:- JEDEC:- Terminal Connector ①:Base ②:Emitter ③:Collector ISAHAYA ELECTRONICS CORPORATION RT1N237X SERIES 〈Transistor〉 Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type MAXIMUM RATING (Ta=25℃) SYMBOL PARAMETER VCBO VEBO VCEO IC I CM PC Tj www.DataSheet4U.coTmstg Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature RT1N237T 125 (※ ) +125 -55~+125 RT1N237U 10 RATING RT1N237M 50 6 50 100 200 RT1N237C +150 -55~+150 RT1N237S 450 UNI T V V V mA mA mW ℃ ℃ (※ ) package mounted on 9mm×19mm×1mm glass-epoxy substrate. ELECTRICAL CHARACTERISTICS (Ta=25℃) SYMBOL PARAMETER V(BR)CEO I CBO hFE VCE(sat) VI(ON) VI(OFF) R1 R2/R1 fT C to E break down voltage Collector cut off current DC forward current gain C to E saturation voltage Input on voltage Input off voltage Input resistance Resistance ratio Gain band width product TYPICAL CHARACTERISTICS TEST CONDITION I C=100μA,RBE=∞ VCB=50V,I E =0 VCE=5V,I C =10mA I C =10mA,I B =0.5mA VCE=0.2V,I C =5mA VCE=5V,I C =100μA VCE=6V,I E =-10mA LIMIT MIN TYP 50 80 0.7 0.5 0.6 1.5 2.2 22 200 INPUT ON VOLTAGE VS.COLLECTOR CURRENT 10 VCE=0.2V 1000 DC FORWARD CURRENT GAIN VS.COLLECTOR CURRENT VCE=5V MAX 0.1 0.3 1.1 2.9 UNIT V μA - V V V kΩ MHz 1 100 DC FORWARD CURRENT GAIN hFE INPUT ON VOLTEGE VI(ON)(V) 0.1 1 10 100 COLLECTOR CURRENT I C(mA) 1000 COLLECTOR CURRENT VS.INPUT OFF VOLTAGE VCE=5V 10 1 10 100 COLLECTOR CURRENT IC(mA) 100 COLLECTOR CURRENT I C(μA) 10 0 0.4 0.8 1.2 1.6 INPUT OFF VOLTAGE VI(OFF)(V) 2 ISAHAYA ELECTRONICS CORPORATION www.DataSheet4U.com Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these materials ·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. ·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. ·All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. ·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHA.


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