Document
RT1N237X SERIES
〈Transistor〉
Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
DESCRIPTION
RT1N237X is a one chip transistor with built-in bias resistor,PNP type is RT1P237X.
FEATURE
www.DataSheet4U.・cBoumilt-in bias resistor (R1=2.2kΩ,R2=47kΩ).
APPLICATION
Inverted circuit,switching circuit,interface circuit, driver circuit.
Equivalent circuit
R1 B (IN)
R2
C (OUT)
E (GND)
RT1N237S
4.0
0.1 0.45
2.0 1.3 0.65 0.65
0.7 0.55 0~0.1
1.6 1.0 0.5 0.5
OUTLINE DRAWING
UNIT:mm
RT1N237U
1.6 0.4 0.8 0.4
RT1N237C
2.5 0.5 1.5
0.5
0.3 2.9 1.90 0.95 0.95
① ②③
① ②③
0.16 0.4
0.15 1.1
0.8 0~0.1
JEITA:- JEDEC:- Terminal Connector ①:Base ②:Emitter ③:Collector
RT1N237M
2.1 0.425 1.25 0.425
①
②③
0.3 1.2 0.8 0.4 0.4
JEITA:SC-59 JEDEC:Similar to TO-236
Terminal Connector ①:Base ②:Emitter ③:Collector
RT1N237T
0.2 0.8 0.2
①
②③
0.25
14.0 3.0 1.0 1.0
0.15 0.45
1.27 1.27
0.9 0.7 0~0.1
0.4
2.5
①②③
JEITA:- JEDEC:- Terminal Connector ①:Emitter ②:Collector ③:Base
JEITA:SC-70 JEDEC:-
Terminal Connector ①:Base ②:Emitter ③:Collector
JEITA:- JEDEC:-
Terminal Connector ①:Base ②:Emitter ③:Collector
ISAHAYA ELECTRONICS CORPORATION
RT1N237X SERIES
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
MAXIMUM RATING (Ta=25℃)
SYMBOL
PARAMETER
VCBO VEBO VCEO IC I CM PC
Tj
www.DataSheet4U.coTmstg
Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature
RT1N237T
125 (※ ) +125
-55~+125
RT1N237U 10
RATING RT1N237M
50 6 50 100 200
RT1N237C
+150 -55~+150
RT1N237S 450
UNI T V V V mA mA mW ℃ ℃
(※ ) package mounted on 9mm×19mm×1mm glass-epoxy substrate.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
PARAMETER
V(BR)CEO I CBO hFE
VCE(sat) VI(ON) VI(OFF)
R1 R2/R1
fT
C to E break down voltage Collector cut off current DC forward current gain C to E saturation voltage Input on voltage Input off voltage Input resistance Resistance ratio Gain band width product
TYPICAL CHARACTERISTICS
TEST CONDITION
I C=100μA,RBE=∞ VCB=50V,I E =0 VCE=5V,I C =10mA I C =10mA,I B =0.5mA VCE=0.2V,I C =5mA VCE=5V,I C =100μA
VCE=6V,I E =-10mA
LIMIT MIN TYP 50
80
0.7 0.5 0.6 1.5 2.2
22 200
INPUT ON VOLTAGE VS.COLLECTOR CURRENT
10 VCE=0.2V
1000
DC FORWARD CURRENT GAIN VS.COLLECTOR CURRENT
VCE=5V
MAX
0.1
0.3 1.1
2.9
UNIT
V μA -
V V V kΩ
MHz
1 100
DC FORWARD CURRENT GAIN hFE
INPUT ON VOLTEGE VI(ON)(V)
0.1 1
10 100 COLLECTOR CURRENT I C(mA)
1000
COLLECTOR CURRENT VS.INPUT OFF VOLTAGE
VCE=5V
10 1
10 100 COLLECTOR CURRENT IC(mA)
100
COLLECTOR CURRENT I C(μA)
10 0
0.4 0.8 1.2 1.6 INPUT OFF VOLTAGE VI(OFF)(V)
2
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