Si3879DV

Si3879DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.070 at VGS = - 5.0 V 0.105 at VGS = - 2.5 V ID (A)a - 5.0 - 4.2 Qg (Typ.) 4.5 nC SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage 20 0.45 at 1 A IF (A)a 2 TSOP-6 Top View FEATURES Halogen-free According to IEC 61249-2-21 Definition LITTLE FOOT® Plus Schottky Power MOSFET Compliant to RoHS Directive 2002/95/EC APPLICATIONS HDD - DC-DC Converter Asynchronous Rectification S A A1 6 D/K 3 mm S G 25 34 2.85 mm D/K D/K Marking Code IG XXX Lot Traceability and Date Code Part # Code Ordering Information: Si3879DV-T1-E3 (Lead (Pb)-free) Si3879DV-T1-GE3 (Lead (Pb)-free and Halogen-free) G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage (MOSFET) VDS Reverse Voltage (Schottky) VKA Gate-Source Voltage (MOSFET) VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) (MOSFET) TC = 70 °C TA = 25 °C ID Pulsed Drain Current (MOSFET) TA = 70 °C IDM Continuous Source-Drain Diode Current (MOSFET Diode Conduction) Average Forward Current (Schottky) TC = 25 °C TA = 25 °C IS IF Pulsed Forward Current (Schottky) IFM TC = 25 °C Maximum Power Dissipation (MOSFET) TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C PD Maximum Power Dissipation (Schottky) TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Limit - 2...