N-Channel MOSFET
N-Channel 20-V (D-S) MOSFET
Si5484DU
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.016 at VGS = 4.5 V 20
0...
Description
N-Channel 20-V (D-S) MOSFET
Si5484DU
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.016 at VGS = 4.5 V 20
0.021 at VGS = 2.5 V
ID (A)a 12 12
Qg (Typ.) 16.5 nC
PowerPAK ChipFET Single
1 2
D3
DD
4
8D 7D
6S
D G
S
5
FEATURES
Halogen-free TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK®
ChipFET® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
RoHS
COMPLIANT
APPLICATIONS Load Switch, PA Switch, and for Portable Applications
D
Marking Code
AF XXX
Lot Traceability and Date Code
Part # Code
G
Bottom View Ordering Information: Si5484DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS VGS
ID
IDM IS
PD
TJ, Tstg
Limit
20
± 12 12a 12a 11.4b, c 9.1b, c 40 12a 2.6b, c 31
20 3.1b, c 2b, c - 55 to 150
260
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain)
t≤5s Steady State
RthJA RthJC
34 3
40 °C/W 4
Notes: a. Package limited.
b. Surface Mounted...
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