Si5853CDC

Si5853CDC Vishay Siliconix P-Channel 20 V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.104 at VGS = - 4.5 V - 4a - 20 0.144 at VGS = - 2.5 V - 3.6 0.205 at VGS = - 1.8 V -3 Qg (Typ.) 4.2 nC SCHOTTKY PRODUCT SUMMARY VKA (V) 20 Vf (V) Diode Forward Voltage 0.46 at 0.5 A IF (A) 1 1206-8 ChipFET 1 A KA KS DG D Marking Code JF XX Lot Traceability and Date Code Part # Code FEATURES Halogen-free According to IEC 61249-2-21 Definition LITTLE FOOT® Plus Schottky Power MOSFET Compliant to RoHS Directive 2002/95/EC APPLICATIONS Charging Switch for Portable Devices - With Integrated Low Vf Trench Schottky Diode S G K Bottom View DA Ordering Information: Si5853CDC-T1-E3 (Lead (Pb)-free) Si5853CDC-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150 °C) (MOSFET) Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) Average Forward Current (Schottky) Pulsed Forward Current (Schottky) Maximum Power Dissipation (MOSFET) Maximum Power Dissipation (Schottky) Operating Junction and Storage Temperature Range Soldering Recommendation (Peak Temperature)d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TC = 70 °C TA ...