Si6465DQ

P-Channel 1.8-V (G-S) MOSFET Si6465DQ Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.012 at VGS = - 4.5 V - 8 0.017 at VGS = - 2.5 V 0.025 at VGS = - 1.8 V ID (A) ± 8.8 ± 7.4 ± 6.0 FEATURES Halogen-free TrenchFET® Power MOSFETs: 1.8 V Rated RoHS COMPLIANT S* D1 S2 S3 G4 TSSOP-8 Si6465DQ Top View 8D 7S 6S 5D Ordering Information: Si6465DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) G * Source Pins 2, 3, 6 and 7 must be tied common D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction)a, b IS Maximum Power Dissipationa, b TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit -8 ±8 ± 8.8 ± 7.1 ± 30 - 1.5 1.5 1.0 - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes: a. Surface Mounted on FR4 board. b. t ≤ 10 s. t ≤ 10 s Steady State Symbol RthJA Typical 90 Maximum 83 Unit °C/W Document Number: 70812 S-80682-Rev. D, 31-Mar-08 www.vishay.com 1 Si6465DQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Fo...