Si7156DP

N-Channel 40-V (D-S) MOSFET Si7156DP Vishay Siliconix PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) 0.0035 at VGS = 10 V 0.0047 at VGS = 4.5 V PowerPAK® SO-8 ID (A)a 50 50 Qg (Typ.) 45 nC 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3G 4 FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET 100 % Rg Tested 100 % Avalanche Tested APPLICATIONS Synchronous Rectification Secondary Side DC/DC D G Bottom View Ordering Information: Si7156DP-T1-E3 (Lead (Pb)-free) Si7156DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH IS IAS EAS Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg S N-Channel MOSFET Limit 40 ± 20 50a 50a 29b, c 23b, c 70 50a 4.9b, c 40 80 83 53 5.4b, c 3.4b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State RthJA RthJC 18 1.0 23 °C/W 1.5 Notes: a. Package Limited. b. Surface Mou...