IXFT10N100

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFT10N100 IXFT12N100 IXFT13N100 V DSS I D25 1000 V 10 A 1000 V 12 A 1000 V 12.5 A trr £ 250 ns R DS(on) 1.20 W 1.05 W 0.90 W Preliminary data sheet Symbol V DSS VDGR V GS VGSM ID25 IDM IAR EAR dv/dt P D TJ T JM Tstg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W T C = 25°C 1.6 mm (0.062 in.) from case for 10 s Mounting torque Maximum Ratings 10N100 12N100 13N100 10N100 12N100 13N100 10N100 12N100 13N100 1000 1000 ±20 ±30 10 12 12.5 40 48 50 10 12 12.5 30 5 V V V V A A A A A A A A A mJ V/ns 300 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 1.13/10 Nm/lb.in. TO-268 = 6 g Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 3 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 ID25 10N100 12N100 13N100 Pulse test, t £ 300 ms, duty cycle d £ 2 % 1000 2.0 V 4.5 V ±100 nA 250 mA 1 mA 1.20 W 1.05 W 0.90 W TO-268 Case Style G S (TAB) G = Gate, S = Source, TAB = Drain Features International standard package Low R HDMOSTM process DS (on) Rugged polysilicon gate cell structure Unclamped Inductive Switch...