CPC3703

BVDSX/ BVDGX 250V RDS(ON) (max) 4Ω IDSS (min) 360mA Package SOT-89 Features Depletion mode device offers low RDS(ON) at cold temperatures Low on resistance 4 ohms max. at 25ºC High input impedance High breakdown voltage 250V Low VGS(off) voltage -1.6 to -3.9V Small package size SOT89 Applications Ignition Modules Normally-on Switches Solid State Relays Converters Telecommunications Power Supply Package Pinout G D S D (SOT89) CPC3703 N-Channel Depletion-Mode Vertical DMOS FETs Description The CPC3703 is an N-channel, depletion mode, field effect transistor (FET) that utilizes Clare’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high-power applications. The CPC3703 is a highly reliable FET device that has been used extensively in Clare’s Solid State Relays for industrial and telecommunications applications. This device excels in power applications that require low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3703 offers a low, 4Ω maximum, on-state resistance at 25ºC. The CPC3703 has a minimum breakdown voltage of 250V, and is available in an SOT89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. Ordering ...