CPC3703

INTEGRATED CIRCUITS DIVISION V(BR)DSX / V(BR)DGX 250V RDS(on) (max) 4 IDSS (min) 360mA Package SOT-89 Features High Breakdown Voltage: 250V Low On-Resistance: 4 max. at 25ºC Low VGS(off) Voltage: -1.6 to -3.9V Depletion Mode Device Offers Low RDS(on) at Cold Temperatures High Input Impedance Small Package Size: SOT-89 Applications Ignition Modules Normally-On Switches Solid State Relays Converters Telecommunications Power Supply Package Pinout G D S D (SOT-89) CPC3703 250V N-Channel Depletion-Mode FET Description The CPC3703 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high-power applications. The CPC3703 is a highly reliable device that has been used extensively in our Solid State Relays for industrial and telecommunications applications. This device excels in power applications that require low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3703 offers a low, 4 maximum, on-state resistance at 25ºC. The CPC3703 has a minimum breakdown voltage of 250V, and is available in an SOT-89 package. As with all MOS devices, the FET structure prevents thermal runaway an...