IXFI7N80P

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA 7N80P IXFI 7N80P IXFP 7N80P VDSS = 800 ID25 = 7 RDS(on) ≤ 1.44 t rr ≤ 250 V A Ω ns Symbol VDSS VDGR VGS V GSM ID25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD M d Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM T C = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-220, TO-3P) TO-220 TO-263 Maximum Ratings 800 V 800 V ± 30 V ± 40 V 7A 18 A 4A 20 mJ 300 mJ 10 V/ns 200 -55 ... +150 150 -55 ... +150 W °C °C °C 300 °C 260 °C 1.13/10 Nm/lb.in. 3g 2.5 g TO-263 (IXFA) G S (TAB) Leaded TO-263 (IXFI) G D S TO-220 (IXFP) (TAB) G DS (TAB) G = Gate S = Source D = Drain TAB = Drain Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250μA Characteristic Values Min. Typ. Max. 800 V VGS(th) VDS = VGS, ID = 1 mA 3.0 5.0 V IGSS VGS = ±30 V, VDS = 0 V ±100 nA IDSS RDS(on) VDS = VDSS VGS = 0 V TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 25 μA 500 μA 1.44 Ω Features z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power densi...