IXFM6N100

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM6N90 IXFH/IXFM6N100 V DSS 900 V 1000 V I D25 6A 6A trr £ 250 ns R DS(on) 1.8 W 2.0 W Symbol VDSS V DGR VGS VGSM ID25 IDM I AR EAR dv/dt PD T J TJM T stg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Maximum Ratings TO-247 AD (IXFH) TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM T C = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Mounting torque 6N90 6N100 900 1000 ±20 ±30 6 24 6 18 5 V V V V A A A mJ V/ns 180 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 3 mA 6N90 6N100 VDS = VGS, ID = 2.5 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 ID25 6N90 6N100 Pulse test, t £ 300 ms, duty cycle d £ 2 % 900 1000 2.0 V V 4.5 V ±100 nA 250 mA 1 mA 1.8 W 2.0 W TO-204 AA (IXFM) (TAB) G = Gate, S = Source, G D D = Drain, TAB = Drain Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic ...