PSMN008-75P

PSMN008-75P N-channel TrenchMOS SiliconMAX standard level FET Rev. 04 — 10 December 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Higher operating power due to low thermal resistance „ Low conduction losses due to low on-state resistance „ Rated for avalanche ruggedness „ Suitable for high frequency applications due to fast switching characteristics 1.3 Applications „ DC-to-DC convertors „ Uninterruptible power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1 and 3 Ptot total power dissipation Tmb = 25 °C; see Figure 2 Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 75 A; VDS = 60 V; Tj = 25 °C; see Figure 11 Static characteristics RDSon drain-source VGS = 10 V; ID = 25 A; on-state resistance Tj = 25 °C; see Figure 9 and 10 Min Typ Max Unit - - 75 V - - 75 A - - 230 W - 50 - nC - 6.5 8.5 mΩ NXP Semiconductors 2. Pinning information Table 2. Pinning information Pin Symbol Description 1G gate 2D drain 3S source mb D mounting base; connected to drain PSMN008-75P N-channel TrenchMOS Silicon...