Document
SUP60N02-4m5P
Vishay Siliconix
N-Channel 20-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
0.0045 at VGS = 10 V 20
0.0065 at VGS = 4.5 V
ID (A)a 60 60
TO-220AB
FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • 100 % Rg Tested • 100 % UIS Tested
APPLICATIONS • OR-ing
D
RoHS
COMPLIANT
DRAIN connected to TAB
G
GD S Top View
Ordering Information: SUP60N02-4m5P-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 100 °C
ID
Pulsed Drain Current
IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
IAS EAS
Maximum Power Dissipationb
TC = 25 °C TA = 25 °Cd
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient (PCB Mount)d
Junction-to-Case
Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material).
Symbol RthJA RthJC
S
N-Channel MOSFET
Limit 20 ± 20 60a 60a 120 50 125 120c 3.75
- 55 to 175
Limit 40 1.25
Unit V
A
mJ W °C
Unit °C/W
Document Number: 69821 S-80182-Rev. A, 04-Feb-08
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SUP60N02-4m5P
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea Dynamicb
V(BR)DSS VGS(th)
IGSS IDSS ID(on)
rDS(on)
gfs
VDS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 125 °C VDS = 20 V, VGS = 0 V, TJ = 175 °C VDS ≥ 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 125 °C VGS = 10 V, ID = 20 A, TJ = 175 °C
VGS = 4.5 V, ID = 20 A VDS = 10 V, ID = 20 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = 10 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargeb
Qg
Gate-Source Chargeb
Qgs VDS = 10 V, VGS = 4.5 V, ID = 50 A
Gate-Drain Chargeb
Qgd
Gate Resistance
Rg
Turn-On Delay Timeb
td(on)
Rise Timeb Turn-Off Delay Timeb
tr td(off)
VDD = 10 V, RL = 0.2 Ω ID ≅ 50 A, VGEN = 10 V, Rg = 1.0 Ω
Fall Timeb
tf
Source-Drain Diode Ratings and Characteristics TC = 25 °Cc
Continuous Current
IS
Pulsed Current
ISM
Forward Voltagea
VSD IF = 20 A, VGS = 0 V
Reverse Recovery Time
trr
Peak Reverse Recovery Current IRM IF = 20 A, di/dt = 100 A/µs
Reverse Recovery Charge
Qrr
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing.
Min.
Typ.
Max.
Unit
20 V
1.0 3
± 100
nA
1
50 µA
250
100 A
0.0036 0.0045
0.0068 0.008
Ω
0.0052 0.0065
95 S
0.75
5950 985 365 33 18
7 1.5 15 7 35 8
50
2.3 25 11 55 12
pF
nC Ω ns
0.85 45 1.7 0.039
60 100 1.5 90 3.4 0.155
A
V ns A µC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 69821 S-80182-Rev. A, 04-Feb-08
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
120
VGS = 10 thru 5 V
VGS = 4 V
90
120 100
80
I D - Drain Current (A)
ID - Drain Current (A)
60 60
30
VGS = 3 V 0
012345
VDS - Drain-to-Source Voltage (V) Output Characteristics
40
20
0 0
200
TC = -55 °C 160
0.010 0.008
rDS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
120 TC = 25 °C 80 40
TC = 125 °C
0.006 0.004 0.002
SUP60N02-4m5P
Vishay Siliconix
TC = 25 °C
TC = 125 °C
TC = - 55 °C
12345
VGS - Gate-to-Source Voltage (V) Transfer Characteristics
VGS = 4.5 V VGS = 10 V
0 0
0.020 0.016
10 20 30
ID - Drain Current (A) Transconductance
40
50
ID = 20 A
0 0
7500 6000
20 40 60 80
ID - Drain Current (A) On-Resistance vs. Drain Current
100
Ciss
C - Capacitance (pF)
rDS(on) - On-Resistance (Ω)
0.012
4500
0.008
TA = 150 °C
0.004
TA = 25 °C 0
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage
Document Number: 69821 S-80182-Rev. A, 04-Feb-08
3000 1500
Coss
Crss 0
0 2 4 6 8 10 12 14 16 18 20
VDS - Drain-to-Source Voltage (V) Capacitance
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SUP60N02-4m5P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10 2.0
ID = 50 A 8
VDS = 10 V
1.7
ID = 20 A
VDS = 16 V 6 1.4
4 1.1
VGS = 10 V VGS = 4.5 V
rDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
2 0.8
0 0
100 10 1
20 40 60
Qg - Total Gate Charge (nC) Gate Charge
80
TJ = 150 °C
TJ = 25 °C
I S - Source Current.