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SUP60N02-4m5P Dataheets PDF



Part Number SUP60N02-4m5P
Manufacturers Vishay
Logo Vishay
Description N-Channel MOSFET
Datasheet SUP60N02-4m5P DatasheetSUP60N02-4m5P Datasheet (PDF)

SUP60N02-4m5P Vishay Siliconix N-Channel 20-V (D-S) 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 0.0045 at VGS = 10 V 20 0.0065 at VGS = 4.5 V ID (A)a 60 60 TO-220AB FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • OR-ing D RoHS COMPLIANT DRAIN connected to TAB G GD S Top View Ordering Information: SUP60N02-4m5P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Sym.

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SUP60N02-4m5P Vishay Siliconix N-Channel 20-V (D-S) 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 0.0045 at VGS = 10 V 20 0.0065 at VGS = 4.5 V ID (A)a 60 60 TO-220AB FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • OR-ing D RoHS COMPLIANT DRAIN connected to TAB G GD S Top View Ordering Information: SUP60N02-4m5P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 100 °C ID Pulsed Drain Current IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C TA = 25 °Cd PD Operating Junction and Storage Temperature Range TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)d Junction-to-Case Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Symbol RthJA RthJC S N-Channel MOSFET Limit 20 ± 20 60a 60a 120 50 125 120c 3.75 - 55 to 175 Limit 40 1.25 Unit V A mJ W °C Unit °C/W Document Number: 69821 S-80182-Rev. A, 04-Feb-08 www.vishay.com 1 SUP60N02-4m5P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VDS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 125 °C VDS = 20 V, VGS = 0 V, TJ = 175 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 125 °C VGS = 10 V, ID = 20 A, TJ = 175 °C VGS = 4.5 V, ID = 20 A VDS = 10 V, ID = 20 A Input Capacitance Ciss Output Capacitance Coss VGS = 0 V, VDS = 10 V, f = 1 MHz Reverse Transfer Capacitance Crss Total Gate Chargeb Qg Gate-Source Chargeb Qgs VDS = 10 V, VGS = 4.5 V, ID = 50 A Gate-Drain Chargeb Qgd Gate Resistance Rg Turn-On Delay Timeb td(on) Rise Timeb Turn-Off Delay Timeb tr td(off) VDD = 10 V, RL = 0.2 Ω ID ≅ 50 A, VGEN = 10 V, Rg = 1.0 Ω Fall Timeb tf Source-Drain Diode Ratings and Characteristics TC = 25 °Cc Continuous Current IS Pulsed Current ISM Forward Voltagea VSD IF = 20 A, VGS = 0 V Reverse Recovery Time trr Peak Reverse Recovery Current IRM IF = 20 A, di/dt = 100 A/µs Reverse Recovery Charge Qrr Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing. Min. Typ. Max. Unit 20 V 1.0 3 ± 100 nA 1 50 µA 250 100 A 0.0036 0.0045 0.0068 0.008 Ω 0.0052 0.0065 95 S 0.75 5950 985 365 33 18 7 1.5 15 7 35 8 50 2.3 25 11 55 12 pF nC Ω ns 0.85 45 1.7 0.039 60 100 1.5 90 3.4 0.155 A V ns A µC Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69821 S-80182-Rev. A, 04-Feb-08 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 120 VGS = 10 thru 5 V VGS = 4 V 90 120 100 80 I D - Drain Current (A) ID - Drain Current (A) 60 60 30 VGS = 3 V 0 012345 VDS - Drain-to-Source Voltage (V) Output Characteristics 40 20 0 0 200 TC = -55 °C 160 0.010 0.008 rDS(on) - On-Resistance (Ω) g fs - Transconductance (S) 120 TC = 25 °C 80 40 TC = 125 °C 0.006 0.004 0.002 SUP60N02-4m5P Vishay Siliconix TC = 25 °C TC = 125 °C TC = - 55 °C 12345 VGS - Gate-to-Source Voltage (V) Transfer Characteristics VGS = 4.5 V VGS = 10 V 0 0 0.020 0.016 10 20 30 ID - Drain Current (A) Transconductance 40 50 ID = 20 A 0 0 7500 6000 20 40 60 80 ID - Drain Current (A) On-Resistance vs. Drain Current 100 Ciss C - Capacitance (pF) rDS(on) - On-Resistance (Ω) 0.012 4500 0.008 TA = 150 °C 0.004 TA = 25 °C 0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Document Number: 69821 S-80182-Rev. A, 04-Feb-08 3000 1500 Coss Crss 0 0 2 4 6 8 10 12 14 16 18 20 VDS - Drain-to-Source Voltage (V) Capacitance www.vishay.com 3 SUP60N02-4m5P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 2.0 ID = 50 A 8 VDS = 10 V 1.7 ID = 20 A VDS = 16 V 6 1.4 4 1.1 VGS = 10 V VGS = 4.5 V rDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 2 0.8 0 0 100 10 1 20 40 60 Qg - Total Gate Charge (nC) Gate Charge 80 TJ = 150 °C TJ = 25 °C I S - Source Current.


PH4025L SUP60N02-4m5P SiHD5N50D


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