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B1109 Dataheets PDF



Part Number B1109
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SB1109
Datasheet B1109 DatasheetB1109 Datasheet (PDF)

2SB1109, 2SB1110 Silicon PNP Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SD1609 and 2SD1610 Outline TO-126 MOD 123 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 1. Emitter 2. Collector 3. Base Ratings 2SB1109 –160 –160 –5 –100 1.25 150 –45 to +150 2SB1110.

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2SB1109, 2SB1110 Silicon PNP Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SD1609 and 2SD1610 Outline TO-126 MOD 123 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 1. Emitter 2. Collector 3. Base Ratings 2SB1109 –160 –160 –5 –100 1.25 150 –45 to +150 2SB1110 –200 –200 –5 –100 1.25 150 –45 to +150 Unit V V V mA W °C °C 2SB1109, 2SB1110 Electrical Characteristics (Ta = 25°C) 2SB1109 2SB1110 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –160 — — –200 — —V IC = –10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO –160 — — –200 — —V IC = –1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –5 — — –5 — — V IE = –10 µA, IC = 0 Collector cutoff current ICBO DC current tarnsfer ratio h *1 FE1 — — –10 — — — µA VCB = –140 V, IE = 0 — — — — — –10 µA VCE = –160 V, IE = 0 60 — 320 60 — 320 VCE = –5 V, IC = –10 mA hFE2 Base to emitter voltage VBE Collector to emitter saturation voltage VCE(sat) 30 — — 30 — — — — –1.5 — — –1.5 V — — –2 — — –2 V VCE = –5 V, IC = –1 mA IC = –5 V, IC = –10 mA IC = –30 mA, IB = –3 mA Gain bandwidth product fT — 140 — — 140 — MHz VCE = –5 V, IC = –10 mA Collector output capacitance Cob — 5.5 — — 5.5 — pF VCB = –10 V, IE = 0, f = 1 MHz Note: 1. The 2SB1109 and 2SB1110 are grouped by hFE1 as follows. B 60 to 120 CD 100 to 200 160 to 320 Collector power dissipation Pc (W) Collector Current IC (mA) Maximum Collector Dissipation Curve 1.5 1.0 0.0 0 50 100 150 Ambient Temperature Ta (°C) Typical Output Characteristics –20 –16 –120 –110 –100 –12 –90 –80 –70 –8 –60 –50 –40 –4 –30 –20 –10 µA IB = 0 0 –2 –4 –6 –8 –10 Collector to emitter Voltage VCE (V) 2 Collector Current IC (mA) Ta = 75°C 25 –25 DC current transfer ratio hFE Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) Collector output capacitance Cob (pF) Gain bandwidth product fT (MHz) 2SB1109, 2SB1110 Typical Transfer Characteristics –100 VCE = –5 V –50 –20 –10 –5 –2 –1 0 –0.2 –0.4 –0.6 –0.8 –1.0 Base to emitter voltage VBE (V) DC Current Transfer Ratio vs. Collector Current 500 VCE = –5 V 200 Ta = 75°C 100 50 25 –25 20 10 5 –1 –2 –5 –10 –20 –50 –100 Collector current IC (mA) Saturation Voltage vs. Collector Current –5 lC = 10 lB –2 –1.0 VBE (sat) TC = –25°C –0.5 –0.2 –0.1 25 75 VCE (sat) –0.05 –1 –2 –5 75 25 TC = –25°C –10 –20 –50 –100 Collector current IC (mA) Gain Gandwidth Product vs. Collector Current 500 VCE = –10 V 200 100 50 20 10 5 –0.5 –1.0 –2 –5 –10 –20 Collector current IC (mA) –50 Collector Output Capacitance vs. Collector to Base Voltage 50 f = 1 MHz IE = 0 20 10 5 2 1.0 0.5 –1 –2 –5 –10 –20 –50 –100 Collector to base voltage VCB (V) 3 2SB1109, 2SB1110 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 4 2SB1109, 2SB1110 Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Hitachi Europe GmbH Semiconductor & IC Div. Electronic Components Group 2000 Sierra Point Parkway Continental Europe Brisbane, CA. 94005-1835 Dornacher Straße 3 USA D-85622 Feldkirchen Tel: 415-589-8300 München Fax: 415-583-4207 Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 . Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdo.


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