B1109

2SB1109, 2SB1110 Silicon PNP Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SD1609 and 2SD1610 Outline TO-126 MOD 123 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 1. Emitter 2. Collector 3. Base Ratings 2SB1109 –160 –160 –5 –100 1.25 150 –45 to +150 2SB1110 –200 –200 –5 –100 1.25 150 –45 to +150 Unit V V V mA W °C °C 2SB1109, 2SB1110 Electrical Characteristics (Ta = 25°C) 2SB1109 2SB1110 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –160 — — –200 — —V IC = –10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO –160 — — –200 — —V IC = –1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –5 — — –5 — — V IE = –10 µA, IC = 0 Collector cutoff current ICBO DC current tarnsfer ratio h *1 FE1 — — –10 — — — µA VCB = –140 V, IE = 0 — — — — — –10 µA VCE = –160 V, IE = 0 60 — 320 60 — 320 VCE = –5 V, IC = –10 mA hFE2 Base to emitter voltage VBE Collector to emitter saturation voltage VCE(sat) 30 — — 30 — — — — –1.5 — — –1.5 V — — –2 — — –2 V VCE = –5 V, IC = –1 mA IC = –5 V, IC = –10 mA IC = –30 mA, IB = –3 mA Gain bandwidth product fT — 140 — — 140 — MHz VCE = –5 V, IC = –10 mA Collector output capacitance Cob — 5.5 — — 5.5 — pF VCB = –10 V...