IXTA160N085T

Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 160N085T IXTA 160N085T IXTP 160N085T VDSS = ID25 = =RDS(on) 85 V 160 A 6.0 mΩ TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS V DGR VGSM ID25 IDRMS IDM IAR E AS dv/dt PD TJ TJM Tstg TL M d Weight TJ = 25°C to 175°C T J = 25°C to 175°C; R GS = 1 MΩ TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C T C = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, T J ≤ 150°C, R G = 10 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s Mounting torque (TO-3P / TO-220) TO-3P TO-220 TO-263 85 V 85 V ±20 V 160 A 75 A 350 A 75 A 1.0 J 3 V/ns 360 -55 ... +175 175 -55 ... +150 300 260 W °C °C °C °C °C 1.13/10 Nm/lb.in. 5.5 g 4g 3g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 85 V V GS(th) V = V , I = 1 mA DS GS D 2.0 4.0 V IGSS VGS = ±20 VDC, VDS = 0 ±200 nA IDSS VDS = VDSS VGS = 0 V TJ = 125°C 25 µA 250 µA RDS(on) VGS = 10 V, ID = 50 A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 5.0 6.0 m Ω G D S TO-220 (IXTP) (TAB) G DS TO-263 (IXTA) (TAB) G S (TAB) G = Gate S = Source D = Drain TAB = Drain Features z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space...