Power MOSFET
Advance Technical Information
Trench Gate Power MOSFET
N-Channel Enhancement Mode
IXTQ 160N085T IXTA 160N085T IXTP 160...
Description
Advance Technical Information
Trench Gate Power MOSFET
N-Channel Enhancement Mode
IXTQ 160N085T IXTA 160N085T IXTP 160N085T
VDSS =
ID25 = =RDS(on)
85 V 160 A 6.0 mΩ
TO-3P (IXTQ)
Symbol
Test Conditions
Maximum Ratings
VDSS V
DGR
VGSM ID25 IDRMS IDM IAR
E AS
dv/dt
PD TJ TJM Tstg TL
M d
Weight
TJ = 25°C to 175°C
T J
=
25°C
to
175°C;
R GS
=
1
MΩ
TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM
TC = 25°C
T C
= 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
T J
≤
150°C,
R G
=
10
Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s
Mounting torque (TO-3P / TO-220)
TO-3P TO-220 TO-263
85 V 85 V
±20 V
160 A 75 A
350 A 75 A
1.0 J
3 V/ns
360
-55 ... +175 175
-55 ... +150
300 260
W
°C °C °C
°C °C
1.13/10 Nm/lb.in.
5.5 g 4g 3g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values Min. Typ. Max.
85 V
V GS(th)
V = V , I = 1 mA DS GS D
2.0 4.0 V
IGSS VGS = ±20 VDC, VDS = 0
±200 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA 250 µA
RDS(on)
VGS = 10 V, ID = 50 A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
5.0 6.0 m Ω
G D S
TO-220 (IXTP)
(TAB)
G DS TO-263 (IXTA)
(TAB)
G S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features
z International standard packages z Unclamped Inductive Switching (UIS)
rated z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount z Space...
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