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IXFH80N08 Dataheets PDF



Part Number IXFH80N08
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXFH80N08 DatasheetIXFH80N08 Datasheet (PDF)

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N08 IXFT 80N08 VDSS ID25 RDS(on) = 80 V = 80 A = 9 mΩ trr ≤ 200 ns Symbol VDSS VDGR VGS VGSM I D25 I L(RMS) I DM IAR EAR EAS dv/dt P D T J TJM Tstg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient T C = 25°C Lead current limit T C = 25°C, pulse width limited by T JM TC = 25°C TC .

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N08 IXFT 80N08 VDSS ID25 RDS(on) = 80 V = 80 A = 9 mΩ trr ≤ 200 ns Symbol VDSS VDGR VGS VGSM I D25 I L(RMS) I DM IAR EAR EAS dv/dt P D T J TJM Tstg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient T C = 25°C Lead current limit T C = 25°C, pulse width limited by T JM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, T J ≤ 150°C, R G = 2 Ω T C = 25°C 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 Maximum Ratings 80 80 ±20 ±30 80 75 320 80 50 2.5 5 V V V V A A A A mJ J V/ns 300 -55 to +150 150 -55 to +150 W °C °C °C 300 °C 1.13/10 Nm/lb.in. 6g 4g Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 1 mA VDS = VGS, ID = 4 mA 80 2.0 VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % V 4.0 V ±100 nA 50 µA 1 mA 9 mΩ TO-247 AD (IXFH) (TAB) TO-268 ( IXFT) Case Style G S G = Gate D = Drain S = Source TAB = Drain (TAB) Features l International standard packages l Low RDS (on) l Rated for unclamped Inductive load switching (UIS) l Molding epoxies meet UL 94 V-0 flammability classification Advantages l Easy to mount l Space savings l High power density © 2001 IXYS All rights reserved Downloaded from Elcodis.com electronic components distributor 98810A (5/01) Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. VDS = 10 V; ID = 0.5 • ID25, pulse test VGS = 0 V, VDS = 25 V, f = 1 MHz 35 55 4800 1675 590 S pF pF pF VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2.5 Ω (External), 50 75 95 31 ns ns ns ns VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 180 42 75 nC nC nC (TO-247) 0.42 K/W 0.25 K/W Source-Drain Diode Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 80 A 320 A 1.5 V trr 200 ns QRM IF = 25A, -di/dt = 100 A/µs, VR = 25 V 0.5 µC IRM 6 A IXFH 80N08 IXFT 80N08 TO-247 AD (IXFH) Outline 123 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Dim. A A1 A2 b b1 b2 C D E e L L1 ∅P Q R S Millimeter Min. Max. 4.7 5.3 2.2 2.54 2.2 2.6 1.0 1.4 1.65 2.13 2.87 3.12 .4 20.80 15.75 .8 21.46 16.26 5.20 19.81 5.72 20.32 4.50 3.55 3.65 5.89 6.40 4.32 5.49 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 .780 0.225 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain IXYS rese.


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