N-Channel MOSFET. IXTJ36N20 Datasheet

IXTJ36N20 MOSFET. Datasheet pdf. Equivalent


IXYS IXTJ36N20
ADVANCE TECHNICAL INFORMATION
HiPerFETTM
N-Channel Enhancement Mode
IXTJ 36N20
VDSS = 200 V
ID25 = 36 A
RDS(on) = 70 m
trr < 200 ns
Symbol
Test Conditions
VDSS
VDGR
VGS
V
GSM
ID25
IDM
IAR
EAR
dv/dt
P
D
TJ
TJM
Tstg
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
TC = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
200 V
200 V
±20 V
±30 V
36 A
144 A
36 A
19 mJ
5 V/ns
300 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
5g
300 ° C
Symbol
V
DSS
VGS(th)
IGSS
I
DSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 18A
Pulse test, t 300 µs, duty cycle d 2 %
200
2
V
4V
±100 nA
25 µA
250 µA
70 m
G
D
S
é
(TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
International standard package
JEDEC TO-247 AD
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
High commutating dv/dt rating
Fast switching times
Applications
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
© 2001 IXYS All rights reserved
98859 9/01


IXTJ36N20 Datasheet
Recommendation IXTJ36N20 Datasheet
Part IXTJ36N20
Description N-Channel MOSFET
Feature IXTJ36N20; ADVANCE TECHNICAL INFORMATION HiPerFETTM N-Channel Enhancement Mode IXTJ 36N20 VDSS = 200 V ID25 .
Manufacture IXYS
Datasheet
Download IXTJ36N20 Datasheet




IXYS IXTJ36N20
IXFJ 36N30
Symbol
gfs
Ciss
C
oss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
R
thJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
12 22
2970
530
180
S
pF
pF
pF
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 2 (External)
29 ns
130 ns
110 ns
98 ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
106 140
24 40
43 74
nC
nC
nC
0.65 K/W
0.24
K/W
Leaded TO-268 Package Outline
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
I
S
VGS = 0 V
ISM Repetitive;
pulse width limited by TJM
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
trr IF = IS, -di/dt = 100 A/µs, TJ = 25°C
VR = 100 V
TJ = 125°C
36 A
144 A
1.8 V
200 ns
350 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025







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