N-Channel Silicon MOSFET
Ordering number : ENA0999
2SK4181
SANYO Semiconductors
DATA SHEET
2SK4181
N-Channel Silicon MOSFET
General-Purpose S...
Description
Ordering number : ENA0999
2SK4181
SANYO Semiconductors
DATA SHEET
2SK4181
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Features
Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. For use of lighting & etc. High-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature
VDSS VGSS
ID IDP PD Tch
PW≤10μs, duty cycle≤1% Tc=25°C (SANYO’s ideal heat dissipation condition*1)
525 V ±30 V 7.5 A
30 A 70 W 150 °C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single pulse) *2
EAS
Avalanche Current *3
IAV
*1 SANYO’s condition is radiation from backside.
34 mJ 7.5 A
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*2 VDD=99V, L=1mH, IAV=7.5A
*3 L≤1mH, single pulse
Marking : K4181
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical eq...
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