6LN04SS

Ordering number : ENA0940 6LN04SS SANYO Semiconductors DATA SHEET 6LN04SS Features 1.5V drive. Halogen Free compliance. N-Channel Silicon MOSFET General-Purpose Switching Device Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on glass epoxy substrate (145mm✕80mm✕1.6mm) Electrical Characteristics at Ta=25°C Ratings 60 ±10 200 800 0.15 150 --55 to +150 Unit V V mA mA W °C °C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Marking : YS Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=100μA VDS=10V, ID=100mA ID=100mA, VGS=4V ID=50mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz min 60 0.4 280 Ratings typ max Unit V 1 μA ±10 μA 1.3 V 480 mS 2.2 2.9 Ω 2.4 3.4 Ω 3.5 7.0 Ω 26 pF 5.9 pF 3.2 pF Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended fo...