P-Channel Silicon MOSFET
Ordering number : ENA0090A
CPH3340
SANYO Semiconductors
DATA SHEET
CPH3340
Features
• Low ON-resistance. • Ultrahigh-...
Description
Ordering number : ENA0090A
CPH3340
SANYO Semiconductors
DATA SHEET
CPH3340
Features
Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID IDP PD Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)
Ratings --20 ±10 --5 --20 1.2 150
--55 to +150
Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Marking : YP
Symbol
Conditions
V(BR)DSS IDSS IGSS
VGS(off) yfs
RDS(on)1 RDS(on)2
Ciss
Coss
Crss
td(on) tr
td(off) tf
ID=--1mA, VGS=0V VDS=--20V, VGS=0V VGS=±8V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--2.5A ID=--2.5A, VGS=--4V ID=--1A, VGS=--2.5V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min --20
--0.4 5.2
Ratings typ
max
Unit
V
--1 µA
±10 µA
--1.4 V
8.6 S
32 45 mΩ
44 62...
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