OYD3407

www.szoyd.com S P E C I F I C AT I O N S Customer Product Name Oyd Part Package P Channel Enhancement Mode MOSFET OYD3407 SOT-23 Approved By Checked By Issued By Shenzhen Ouyada Electronics Co., Ltd. Address: Galaxy Century Building located at the southwest junction of Shennan Avenue and Caitian Road, Futian District, Shenzhen Room 2412-2413 A building Tel: 0086-755-82793361 83951116 Fax: 0086-755-83951115 E-Mail:[email protected] 【For Customer approval Only】 Qualification Status: Full Approved By Verified By Date: Restricted Rejected Re-checked By Checked By Comments: OYD3407 SOT-23 P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION WPM3407 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L FEATURE 3 D GS 12 1.Gate 2.Source 3.Drain -30V/-4.0A, RDS(ON) = 53mΩ (Typ.) @VGS = -10V -30V/-3.2A, RDS(ON) = 60mΩ @VGS = -4.5V Super high density cell design for Extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design 16 OYD3407 SOT-23 P Channel Enhancement Mode MO...