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S P E C I F I C AT I O N S
Customer Product Name Oyd Part Package
P Channel Enhancement Mode MOSFET
OYD3...
www.szoyd.com
S P E C I F I C AT I O N S
Customer Product Name Oyd Part Package
P Channel Enhancement Mode MOSFET
OYD3407 SOT-23
Approved By
Checked By
Issued By
Shenzhen Ouyada Electronics Co., Ltd.
Address: Galaxy Century Building located at the southwest junction of Shennan Avenue and
Caitian Road, Futian District, Shenzhen Room 2412-2413 A building
Tel: 0086-755-82793361 83951116 Fax: 0086-755-83951115 E-Mail:
[email protected]
【For Customer approval Only】
Qualification Status:
Full
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Rejected
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Comments:
OYD3407 SOT-23
P Channel Enhancement Mode MOSFET
-4.0A
DESCRIPTION
WPM3407 is the P-Channel logic enhancement mode power field effect
transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION SOT-23-3L
FEATURE
3 D GS 12
1.Gate 2.Source 3.Drain
-30V/-4.0A, RDS(ON) = 53mΩ (Typ.) @VGS = -10V
-30V/-3.2A, RDS(ON) = 60mΩ @VGS = -4.5V
Super high density cell design for Extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability SOT-23-3L package design
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OYD3407 SOT-23
P Channel Enhancement Mode MO...