KPM2015

SMD Type MOSFET P-Channel MOSFET WPM2015 (KPM2015) ■ Features ● VDS (V) =-20V ● ID =-2.4 A ● RDS(ON) ＜ 110mΩ (VGS =-4.5V) ● RDS(ON) ＜ 150mΩ (VGS =-2.5V) ● Supper high density cell design +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 D 3 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 12 GS ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note.1) Ta=25°C Ta=70°C Power Dissipation (Note.1) Ta=25°C Ta=70°C Continuous Drain Current (Note.2) Ta=25°C Ta=70°C Power Dissipation Pulsed Drain Current (Note.2) (Note.3) Ta=25°C Ta=70°C Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Lead Temperature (Note.1) (Note.2) Junction Storage Temperature Range Symbol VDS VGS ID PD ID PD IDM RthJA RthJC TJ TL Tstg 10 S Steady State -20 ±8 -2.4 -2.2 -1.9 -1.7 0.9 0.8 0.5 0.5 -2.2 -2 -1.7 -1.6 0.7 0.6 0.5 0.4 -10 135 155 160 190 __ 75 150 260 -55 to 150 Note.1: Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper Note.2: Surface mounted on FR-4 board using minimum pad size, 1oz copper Note.3: Pulse width<380μs, Duty Cycle<2% Unit V A W A W A ℃/W ℃ www.kexin.com.cn 1 SMD Type MOSFET P-Channel MOSFET WPM2015 (KPM2015) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain C...