WPM2005B
Power MOSFET and Schottky Diode
Features
z Featuring a MOSFET and Schottky Diode z Independent Pinout to each...
WPM2005B
Power MOSFET and
Schottky Diode
Features
z Featuring a MOSFET and
Schottky Diode z Independent Pinout to each Device to Ease Circuit Design
z Ultra Low VF
Schottky
Applications
z Li--Ion Battery Charging z High Side DC-DC Conversion Circuits z High Side Drive for Small Brushless DC Motors
z Power Management in Portable, Battery Powered Products
WPM2005B
DFN3×2-8L
MOSFET MAXIMUM RATINGS (TJ = 25ć unless otherwise noted)
Parameter
Symbol
Value
Units
Drain-Source voltage Gate-Source Voltage Continuous Drain Current Drain Current-Pulsed Power Dissipation Junction Temperature Storage Temperature Thermal Resistance, Junction-to-Ambient
VDSS VGS ID IDM PD TJ Tstg RԦJA
-20 f8 -2.7
-10 1.1 150 -55~150 110
V V A A W ć ć ć/W
SCHOTTKY DIODE MAXIMUM RATINGS(TJ = 25ć unless otherwise noted)
Parameter
Symbol
Limits
Unit
Peak repetitive reverse voltage .
DC Blocking voltage
Average rectified forward current
VRRM VR IF
20 20 1
V V A
pin connections:
1
A
2
A
S
3
G
4
8
C
7
C
6
D
D
5
Marking:
JA
J = Specific Device Code A = Date Code
Order information
PartNumber WPM2005BͲ8/TR
Package DFN3*2- 8L
Shipping 3000Tape&Reel
http://www.willsemi.com
Page 1
9/8/2009 Rev1.2
MOSFET ELECTRICAL CHARACTERISTICS(Tamb=25ć unless otherwise specified)
WPM2005B
Parameter
Symbol
Test Condition
Min Typ
Max Units
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate –Source leakage current
BVDSS IDSS IGSS
VGS = 0V,...
