WPM2014

WPM2014 WPM2014 Single P-Channel, -20V, -4.9A, Power MOSFET Http//:www.sh-willsemi.com VDS (V) -20 Rds(on) (Ω) 0.050 @ VGS=–4.5V 0.063 @ VGS=–2.5V 0.074 @ VGS=–1.8V Descriptions The WPM2014 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM2014 is Pb-free. Features DFN2x2-6L D DS 6 54 D S 1 23 D DG Pin configuration (Top view) 6 54  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package DFN2x2-6L Applications  Driver for Relay, Solenoid, Motor, LED etc.  DC-DC converter circuit  Power Switch  Load Switch  Charging WLSI SYWW 1 23 WLSI = Company code S = Device code Y = Year (Last digit) WW = Week Marking Order information Device Package Shipping WPM2014-6/TR DFN2x2-6L 3000/Reel&Tape Will Semiconductor Ltd. 1 Oct, 2013-Rev.1.3 WPM2014 ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C, unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Maximum Power Dissipation a Continuous Drain Current (TJ = 150 °C)b Maximum Power Dissipation b Pulsed Drain Current c Operating Junction Temperature Storage Temperature Range TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C Symbol VDS VGS ID PD ID PD IDM TJ...