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WTA20 Dataheets PDF



Part Number WTA20
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description 20A Triacs
Datasheet WTA20 DatasheetWTA20 Datasheet (PDF)

Webwatch Features ■ IT(RMS) = 20 A ■ VDRM, VRRM = 600 and 700 V ■ IGT (Q1) (max) = 35 and 50 mA Description The WTA20 Triacs use high performance glass passivated chip technology. The Snubberless concept offers suppression of the RC network and is suitable for applications such as phase control and static switching on inductive or resistive load. Thanks to their clip assembly technique, the WTA20 Triacs provide a superior performance in surge current handling capabilities. By using an internal c.

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Webwatch Features ■ IT(RMS) = 20 A ■ VDRM, VRRM = 600 and 700 V ■ IGT (Q1) (max) = 35 and 50 mA Description The WTA20 Triacs use high performance glass passivated chip technology. The Snubberless concept offers suppression of the RC network and is suitable for applications such as phase control and static switching on inductive or resistive load. Thanks to their clip assembly technique, the WTA20 Triacs provide a superior performance in surge current handling capabilities. By using an internal ceramic pad, the WTA series provides voltage insulated tab (rated at 2500Vrms) WTA20 20A Triacs Datasheet  production data A2 G A1 A1 A2 G TO-220AB Insulated TM: Snubberless is a trademark of STMicroelectronics. This is information on a product in full production. 1/6 Characteristics 1 Characteristics WTA20 Table 1. Symbol Absolute maximum ratings Parameter Value Unit IT(RMS) ITSM I²t dI/dt VDSM, VRSM IGM VGM PG(AV) Tstg Tj On-state rms current (full sine wave) Tc = 70 °C 20 A Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 50 Hz F = 60 Hz t = 10 ms t = 8.3 ms 210 200 A I²t Value for fusing tp = 10 ms 200 A²s Repetitive Critical rate of rise of on-state current F = 50 Hz IG = 2 x IGT, tr  100 ns Tj = 125 °C 50 A/µs Non repetitive 100 Non repetitive peak off-state voltage tp = 10 ms Tj = 25 °C VDSM/VRSM + 100 V Peak gate current Peak positive gate voltage Average gate power dissipation tp = 20 µs tp = 20 µs Storage junction temperature range Operating junction temperature range Tj = 125 °C 4 16 Tj = 125 °C 1 - 40 to + 150 - 40 to + 125 A V W °C Table 2. Symbol Electrical characteristics (Tj = 25 °C, unless otherwise specified) Test conditions Quadrant WTA20 BW CW Unit IGT (1) VGT VGD IH (2) VD = 12 V, RL = 33  VD = VDRM, RL = 3.3 kTj = 125 °C IT = 500 mA, gate open IL IG = 1.2 IGT dV/dt (2) VD = 67% VDRM, gate open (dV/dt)c (2) (dI/dt)c = 20 A/ms  ALL ALL ALL I - III II I - II - III Tj = 125 °C Tj = 125 °C Min. Max. Max. Min. Max. Typ. Max. Typ. Min. Typ. Min. 21 50 35 1.5 0.2 75 50 50 90 - 80 750 500 500 250 36 22 18 11 mA V V mA mA V/µs V/µs 1. Minimum IGT is guaranteed at 5% of IGT max. 2. For both polarities of A2 referenced to A1. 2/6 WTA20 Characteristics Table 3. Static characteristics Symbol VTM (1) ITM = 28 A, tp = 380 µs IDRM IRRM VDRM = VRRM 1. For both polarities of A2 referenced to A1. Table 4. Thermal resistances Symbol Rth(j-c) Rth(j-c) Rth(j-a) Junction to case for AC Junction to case for DC Junction to ambient Parameter Tj = 125 °C Tj = 125 °C Tj = 125 °C Parameter Max. Max. Value 1.70 10 3 Unit V µA mA Value 2.1 2.8 60 Unit °C/W Figure 1. Maximum power dissipation versus Figure 2. on-state rms current (full cycle) Correlation between maximum rms power dissipation and maximum allowable temperatures P(W) 30 25 20 15 10 α = 60° α = 30° 5 0 05 α = 180° α = 120° α = 90° IT(RMS)(A) 10 180° α α 15 P(W) 30 25 20 Rth = 0°C/W Rth = 0.5°C/W Tcase(°C) 65 75 85 15 Rth = 1.5°C/W 10 Rth = 1°C/W 95 105 5 (Tamb and Tcase) for different thermal resistances heatsink + contact Tamb(°C) 0 20 0 20 40 60 80 100 120 115 125 Figure 3. On-state rms current versus case Figure 4. Relative variation of thermal temperature (full cycle) impedance versus pulse duration IT(RMS)(A) 25 20 α = 180° K=[Zth/Rth] 1 Zth(j-c) 15 10 0.1 5 TC(°C) 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0.01 1.E-3 1.E-2 Zth(j-a) 1.E-1 tp(s) 1.E+0 1.E+1 1.E+2 5.E+2 3/6 Characteristics WTA20 Figure 5. On-state characteristics (maximum values) ITM(A) 1000 Tj max. Vt0 = 1.04V Rd = 20 mΩ 100 Tj = Tj max. 10 Tj = 25°C. VTM(V) 1 1 234 Figure 6. Non repetitive surge peak on-state current versus number of cycles ITSM(A) 1000 Non repetitive Tj initial=25°C t=20ms One cycle 100 51 Number of cycles 10 100 1000 Figure 7. Non repetitive surge peak on-state Figure 8. current for a sinusoidal pulse and corresponding value of I2t Relative variation of gate trigger current and holding current versus junction temperature ITSM(A), I2t (A2s) 1000 pulse width t ≤ 10 ms 100 0.01 ITSM I2t tp(ms) 0.10 1.00 Tj initial=25°C IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] 2.5 2.0 1.5 IGT 1.0 IH & IL 10.00 0.5 Tj(°C) 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 4/6 WTA20 2 Ordering information scheme Ordering information scheme Figure 9. Ordering information scheme WT A 20 - 600 BW RG Triac series Insulation A = insulated Current 20 = 20A Voltage 600 = 600V 800 = 800V Sensitivity and type BW = 50mA (max.) CW = 35mA (max) Packing mode RG = Tube Table 5. Product selector Order code Voltage 600 V 700 V WTA20-600CWRG X WTA20-800BWRG X WTA20-800CWRG X Sensitivity Type Package 35 mA 50 mA 35 mA 3 quadrants TO-220AB Ins. 5/6 Package information WTA20 3 Package information Table 6. I4 l3 l2 TO-220AB dimensions Dimensions Ref. Millimeters Inches B ØI L A a1 a2 b1 e Mi.


MBRF30100CTP WTA20 MC5832


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