CPH6411

Ordering number : ENN7383 CPH6411 N-Channl Silicon MOSFET CPH6411 Ultrahigh-Speed Switching Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Package Dimensions unit : mm 2151A [CPH6411] 2.9 6 54 0.15 0.05 0.2 0.6 1.6 0.6 2.8 12 3 0.95 0.4 0.7 0.2 0.9 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Specifications Absolute Maximum Ratings at Ta=25°C SANYO : CPH6 Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Characteristics at Ta=25°C Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Ratings 20 ±10 6 24 1.6 150 --55 to +150 Unit V V A A W °C °C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Marking : KM Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) yfs ID=1mA, VGS=0 VDS=20V, VGS=0 VGS= ±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=3A min 20 0.4 7.7 Ratings typ max Unit V 1 µA ±10 µA 1.3 V 11 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result i...